IXFK55N50 IXYS, IXFK55N50 Datasheet - Page 4

• Manufacturer Part Number: IXFK55N50
• Description: MOSFET N-CH 500V 55A TO-264AA
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFK55N50

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 80 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 55A
• Vgs(th) (max) @ Id: 4.5V @ 8mA
• Gate Charge (qg) @ Vgs: 330nC @ 10V
• Input Capacitance (ciss) @ Vds: 9400pF @ 25V
• Power - Max: 625W
• Mounting Type: Through Hole
• Package / Case: TO-264AA
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.09 Ohms
• Forward Transconductance Gfs (max / Min): 45 s
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 55 A
• Power Dissipation: 625 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 55
• Rds(on), Max, Tj=25°c, (?): 0.08
• Ciss, Typ, (pf): 9400
• Qg, Typ, (nc): 330
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 568
• Rthjc, Max, (ºc/w): 0.22
• Package Style: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1.00
0.10
0.01
0.00
12
10
8
6
4
2
0
10
100
0
Figure 7. Gate Charge
80
60
40
20
Figure 10. Transient Thermal Resistance
-4
0
0.2
Figure 9.
50
V
I
DS
D
= 27.5A
100
= 250V
Gate Charge - nC
0.4
T
Forward Voltage Drop of the
Intrinsic Diode
J
150
= 125
V
SD
10
O
C
-3
200
- Volts
0.6
T
J
250
= 25
O
C
0.8
300
350
10
Pulse Width - Seconds
-2
1.0
10000
1000
100
10
-1
0
IXFK55N50
Figure 8. Capacitance Curves
5
10
15
V
IXFK55N50/IXFX55N50
Coss
DS
Ciss
10
- Volts
20
0
Crss
25
IXFX55N50
IXFN55N50
IXFN55N50
f = 1MHz
30
35
10
40
1