NTF3055-100T1G ON Semiconductor, NTF3055-100T1G Datasheet - Page 2

• Manufacturer Part Number: NTF3055-100T1G
• Description: MOSFET N-CH 60V 3A SOT223
• Manufacturer: ON Semiconductor

Specifications of NTF3055-100T1G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 110 mOhm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 22nC @ 10V
• Input Capacitance (ciss) @ Vds: 455pF @ 25V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.11 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 3.2 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3 A
• Power Dissipation: 2100 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTF3055-100T1GOS; NTF3055-100T1GOS; NTF3055-100T1GOSTR

3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
4. Switching characteristics are independent of operating junction temperatures.
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 3)
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS (Note 4)
SOURCE−DRAIN DIODE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 3)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
Gate−Body Leakage Current
Gate Threshold Voltage (Note 3)
Threshold Temperature Coefficient (Negative)
Static Drain−to−Source On−Resistance (Note 3)
Static Drain−to−Source On−Resistance (Note 3)
Forward Transconductance (Note 3)
Input Capacitance
Output Capacitance
Transfer Capacitance
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Gate Charge
Forward On−Voltage
Reverse Recovery Time
Reverse Recovery Stored Charge
(V
(V
(V
(V
(V
(V
(V
(V
(V
GS
DS
DS
GS
DS
GS
GS
GS
DS
= 0 Vdc, I
= 60 Vdc, V
= 60 Vdc, V
= ± 20 Vdc, V
= V
= 10 Vdc, I
= 10 Vdc, I
= 10 Vdc, I
= 8.0 Vdc, I
GS
, I
D
D
= 250 mAdc)
D
D
D
= 250 mAdc)
D
GS
GS
= 1.5 Adc)
= 3.0 Adc)
= 1.5 Adc, T
= 1.7 Adc)
DS
= 0 Vdc)
= 0 Vdc, T
= 0 Vdc)
Characteristic
J
J
= 150°C)
= 150°C)
(T
(V
(V
(I
(I
(I
A
dI
(V
S
S
S
DD
DS
V
= 25°C unless otherwise noted)
S
DS
= 3.0 Adc, V
R
= 3.0 Adc, V
T
= 3.0 Adc, V
GS
/dt = 100 A/ms) (Note 3)
J
= 30 Vdc, I
= 48 Vdc, I
G
= 25 Vdc, V
= 150°C) (Note 3)
V
= 10 Vdc) (Note 3)
= 9.1 W) (Note 3)
f = 1.0 MHz)
GS
= 10 Vdc,
http://onsemi.com
GS
GS
GS
D
D
= 3.0 Adc,
GS
= 3.0 Adc,
= 0 Vdc)
= 0 Vdc,
= 0 Vdc,
= 0 V,
2
V
Symbol
R
V
V
(BR)DSS
t
t
I
I
DS(on)
C
Q
DS(on)
C
V
GS(th)
C
d(on)
d(off)
DSS
GSS
g
Q
Q
Q
t
t
t
oss
t
t
SD
iss
rss
RR
rr
a
b
fs
r
f
T
1
2
Min
2.0
60
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.27
0.24
10.6
0.89
0.74
0.04
Typ
324
110
3.0
6.6
3.2
9.4
1.9
4.2
8.6
68
66
88
35
14
21
13
30
22
−
−
−
± 100
Max
0.40
110
455
155
1.0
4.0
1.0
10
50
20
30
45
30
22
−
−
−
−
−
−
−
−
−
−
−
−
mV/°C
mV/°C
Mhos
mAdc
nAdc
Unit
Vdc
Vdc
mW
Vdc
Vdc
nC
mC
pF
ns
ns