NTF3055-100T1G ON Semiconductor, NTF3055-100T1G Datasheet - Page 5

• Manufacturer Part Number: NTF3055-100T1G
• Description: MOSFET N-CH 60V 3A SOT223
• Manufacturer: ON Semiconductor

Specifications of NTF3055-100T1G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 110 mOhm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 22nC @ 10V
• Input Capacitance (ciss) @ Vds: 455pF @ 25V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.11 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 3.2 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3 A
• Power Dissipation: 2100 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTF3055-100T1GOS; NTF3055-100T1GOS; NTF3055-100T1GOSTR

NTF3055−100
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Figure 13. Thermal Response
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