NTF3055-100T1G ON Semiconductor, NTF3055-100T1G Datasheet - Page 4
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NTF3055-100T1G
Manufacturer Part Number
NTF3055-100T1G
Description
MOSFET N-CH 60V 3A SOT223
Manufacturer
ON Semiconductor
Datasheet
1.NTF3055-100T1G.pdf
(6 pages)
Specifications of NTF3055-100T1G
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
110 mOhm @ 1.5A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
3A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
22nC @ 10V
Input Capacitance (ciss) @ Vds
455pF @ 25V
Power - Max
1.3W
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Configuration
Single Dual Drain
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.11 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
3.2 S
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
3 A
Power Dissipation
2100 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NTF3055-100T1GOS
NTF3055-100T1GOS
NTF3055-100T1GOSTR
NTF3055-100T1GOS
NTF3055-100T1GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NTF3055-100T1G
Manufacturer:
ON Semiconductor
Quantity:
27 000
Company:
Part Number:
NTF3055-100T1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
NTF3055-100T1G
Manufacturer:
ON/安森美
Quantity:
20 000
0.01
800
700
600
500
400
300
200
100
100
100
0.1
10
10
0
1
1
10
0.1
1
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE
V
SINGLE PULSE
T
C
V
I
V
C
Figure 9. Resistive Switching Time Variation
D
V
C
GS
Figure 11. Maximum Rated Forward Biased
DS
GS
iss
rss
DS
= 3 A
= 25°C
V
= 20 V
DS
= 30 V
= 10 V
= 0 V
5
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
V
THERMAL LIMIT
PACKAGE LIMIT
GS
t
d(off)
R
R
versus Gate Resistance
DS(on)
0
G
Safe Operating Area
, GATE RESISTANCE (W)
1
V
V
10 ms
DS
GS
LIMIT
= 0 V
5
(VOLTS)
10
C
t
f
rss
10
1 ms
100 ms
10
t
d(on)
15
C
C
oss
t
iss
r
T
J
= 25°C
dc
20
http://onsemi.com
100
100
25
4
12
10
80
70
60
50
40
30
20
10
0.54
8
6
4
2
0
3
2
1
0
0
0
25
Figure 10. Diode Forward Voltage versus Current
Figure 12. Maximum Avalanche Energy versus
Drain−to−Source Voltage versus Total Charge
V
T
Q
J
GS
0.58
T
1
V
= 25°C
J
SD
, STARTING JUNCTION TEMPERATURE (°C)
= 0 V
50
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
2
0.62
Starting Junction Temperature
Figure 8. Gate−to−Source and
Q
g
, TOTAL GATE CHARGE (nC)
0.66
Q
75
4
2
0.7
Q
T
100
6
0.74
V
0.78
125
GS
8
0.82 0.86
I
T
I
D
D
150
J
10
= 7 A
= 3 A
= 25°C
0.9
175
12