SI4403BDY-T1-E3 Vishay, SI4403BDY-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI4403BDY-T1-E3
• Description: MOSFET P-CH 20V 7.3A 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4403BDY-T1-E3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 17 mOhm @ 9.9A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 7.3A
• Vgs(th) (max) @ Id: 1V @ 350µA
• Gate Charge (qg) @ Vgs: 50nC @ 5V
• Power - Max: 1.35W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.017 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 7.3 A
• Power Dissipation: 1350 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -9.9A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 17mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -450mV
• Power Dissipation Pd: 2.5W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI4403BDY-T1-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72268
S09-0705-Rev. C, 27-Apr-09
0.08
0.06
0.04
0.02
0.00
30
10
1
5
4
3
2
1
0
0.0
0
0
V
I
D
Source-Drain Diode Forward Voltage
DS
= 9.9 A
0.2
V
On-Resistance vs. Drain Current
= 10 V
GS
6
V
7
SD
= 1.8 V
Q
g
T
- Source-to-Drain Voltage (V)
I
0.4
J
D
- Total Gate Charge (nC)
= 150 °C
- Drain Current (A)
Gate Charge
12
14
0.6
18
21
0.8
T
V
V
J
GS
GS
= 25 °C
= 2.5 V
= 4.5 V
24
28
1.0
1.2
30
35
4000
3500
3000
2500
2000
1500
1000
0.08
0.06
0.04
0.02
0.00
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
500
- 50
0
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
I
D
V
I
D
- 25
C
GS
= 3.1 A
rss
= 9.9 A
= 4.5 V
1
4
T
0
J
V
V
C
GS
- Junction T emperature (°C)
DS
oss
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
2 5
Capacitance
2
8
I
D
5 0
= 9.9 A
Vishay Siliconix
C
iss
Si4403BDY
12
7 5
3
100
www.vishay.com
16
4
125
150
20
5
3