SI4403BDY-T1-E3 Vishay, SI4403BDY-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI4403BDY-T1-E3
• Description: MOSFET P-CH 20V 7.3A 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4403BDY-T1-E3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 17 mOhm @ 9.9A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 7.3A
• Vgs(th) (max) @ Id: 1V @ 350µA
• Gate Charge (qg) @ Vgs: 50nC @ 5V
• Power - Max: 1.35W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.017 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 7.3 A
• Power Dissipation: 1350 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -9.9A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 17mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -450mV
• Power Dissipation Pd: 2.5W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI4403BDY-T1-E3TR

Si4403BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.1
- 0.2
0.01
0.4
0.3
0.2
0.1
0.0
0.1
- 50
2
1
10
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
- 25
Single Pulse
I
D
0
= 350 µA
T
Threshold Voltage
J
10
- Temperature (°C)
25
-3
50
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
10
0.01
100
100
0.1
10
-2
1
0.1
Limited by R
125
Limited
by I
* V
GS
D(on)
Single Pulse
T
A
Square Wave Pulse Duration (s)
> minimum V
150
V
= 25 °C
DS
(DS)on
10
Safe Operating Area
- Drain-to-Source Voltage (V)
-1
1
*
Limited by BVDSS
GS
at which R
1
10
DS(on)
30
24
18
12
6
0
10
Limited by I
-2
is specified
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
DC
Single Pulse Power, Junction-to-Ambient
10
DM
-1
100
1 0
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
1
t
1
A
Time (s)
= P
t
2
S09-0705-Rev. C, 27-Apr-09
DM
Document Number: 72268
Z
th J A
100
th J A
10
t
t
1
2
(t )
= 71 °C/W
100
600
1000