STB60NF06T4 STMicroelectronics, STB60NF06T4 Datasheet - Page 3

MOSFET N-CH 60V 60A D2PAK

STB60NF06T4

Manufacturer Part Number
STB60NF06T4
Description
MOSFET N-CH 60V 60A D2PAK
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet

Specifications of STB60NF06T4

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
16 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
60A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
66nC @ 10V
Input Capacitance (ciss) @ Vds
1810pF @ 25V
Power - Max
110W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.015 Ohms
Forward Transconductance Gfs (max / Min)
20 S
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
60 A
Power Dissipation
110 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Fall Time
20 ns
Minimum Operating Temperature
- 65 C
Rise Time
108 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-7950-2
STB60NF06T4

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STB60NF06T4
Manufacturer:
ST MICROELECTRONICS
Quantity:
30 000
Part Number:
STB60NF06T4
Manufacturer:
ST
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Part Number:
STB60NF06T4
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STB60NF06 - STB60NF06-1
1
Electrical ratings
Table 1.
1. Pulse width limited by safe operating area.
2.
Table 2.
Table 3.
Symbol
Rthj-case
Rthj-amb
Symbol
dv/dt
I
E
SD
I
V
I
AR
DM
AS
V
V
T
T
P
DGR
I
I
T
DS
GS
stg
≤ 60A, di/dt ≤ 400A/µs, V
J
D
D
tot
j
(1)
(2)
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
(starting T
Absolute maximum ratings
Thermal data
Avalanche characteristics
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering purpose
Drain-source voltage (V
Drain-gate voltage (R
Gate- source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating Factor
Peak diode recovery voltage slope
Storage temperature
Max. operating junction temperature
j
= 25 °C, I
DD
≤ 24V, Tj ≤ T
Parameter
D
Parameter
= I
C
j
GS
max)
AR
= 25°C
GS
JMAX
, V
= 20 kΩ)
= 0)
DD
= 30 V)
C
C
= 25°C
= 100°C
-65 to 175
Value
± 20
0.73
240
110
60
60
60
42
4
Max Value
360
30
Electrical ratings
1.36
62.5
300
W/°C
V/ns
Unit
°C
W
V
V
V
A
A
A
°C/W
°C/W
Unit
mJ
°C
A
3/14

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