IRFZ46NSTRLPBF International Rectifier, IRFZ46NSTRLPBF Datasheet - Page 2

• Manufacturer Part Number: IRFZ46NSTRLPBF
• Description: MOSFET N-CH 55V 53A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFZ46NSTRLPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 16.5 mOhm @ 28A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 53A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 72nC @ 10V
• Input Capacitance (ciss) @ Vds: 1696pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 53 A
• Power Dissipation: 120 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 48 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRFZ46NSTRLPBF; IRFZ46NSTRLPBFTR

Electrical Characteristics @ T
IRFZ46NS/LPbF

‚
ƒ
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
E
Source-Drain Ratings and Characteristics
Notes:
I
I
L
V
∆V
R
V
g
Q
Q
Q
t
t
t
t
C
C
C
I
I
V
t
Q
t
DSS
GSS
S
d(on)
r
d(off)
f
on
SM
rr
S
AS
fs
For recommended footprint and soldering techniques refer to application note #AN-994.
(BR)DSS
DS(on)
GS(th)
g
gd
iss
oss
rss
gs
SD
rr
Repetitive rating; pulse width limited by
T
R
I
(BR)DSS
max. junction temperature. ( See fig. 11 )
Starting T
2
SD
J
G
≤ 175°C.
= 25Ω, I
≤ 28A, di/dt ≤ 220A/µs, V
/∆T
J
J
Drain-to-Source Leakage Current
Internal Source Inductance
= 25°C, L = 389µH
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
AS
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
= 28A. (See Figure 12)
Parameter
Parameter
DD
≤ V
(BR)DSS
J
,
= 25°C (unless otherwise specified)
‚
„
…
†
‡
ˆ
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Uses IRFZ46N data and test conditions.
This is a typical value at device destruction and represents
operation outside rated limits.
This is a calculated value limited to TJ = 175°C.
Calculated continuous current based on maximum allowable
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 583
Min. Typ. Max. Units
––– 0.057 –––
–––
2.0
Min. Typ. Max. Units
junction temperature. Package limitation current is 39A.
55
19
–––
–––
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
1696 –––
–––
–––
–––
–––
–––
–––
––– -100
–––
–––
–––
407
110
––– .0165
–––
–––
–––
208
14
76
52
57
7.5
67
†
152
–––
–––
100
–––
–––
–––
–––
–––
–––
–––
101
312
4.0
250
180
72
11
26
1.3
25
53
‡
V/°C
µA
nA
nH
nC
ns
pF
ns
nC
V
Ω
V
S
V
A
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
R
Between lead,
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5…
I
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs „…
D
D
AS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
J
J
G
D
= 28A
= 28A
= 25°C, I
= 25°C, I
= 28A, L = 389mH
= 12Ω
= 0.98Ω, See Fig. 10„…
= V
= 44V, V
= 0V, I
=10V, I
= 25V, I
= 55V, V
= 20V
= -20V
= 44V
= 10V, See Fig. 6 and 13 „…
= 0V
= 25V
= 28V
GS
, I
D
F
D
S
D
D
= 250µA
GS
= 28A
GS
= 28A, V
Conditions
= 28A „
Conditions
= 250µA
= 28A„…
= 0V, T
= 0V
D
www.irf.com
GS
=1mA…
J
= 150°C
= 0V „
G
S
+L
D
D
S
)