IRFZ46NSTRLPBF International Rectifier, IRFZ46NSTRLPBF Datasheet - Page 3

• Manufacturer Part Number: IRFZ46NSTRLPBF
• Description: MOSFET N-CH 55V 53A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFZ46NSTRLPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 16.5 mOhm @ 28A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 53A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 72nC @ 10V
• Input Capacitance (ciss) @ Vds: 1696pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 53 A
• Power Dissipation: 120 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 48 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRFZ46NSTRLPBF; IRFZ46NSTRLPBFTR

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1 0 0 0
1 0 0 0
1 0 0
1 0 0
1 0
1 0
1
1
0.1
4
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
TO P
BO TTOM 4.5V
V
V
5
G S
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
D S
, G ate-to -So urce Voltag e (V)
, D rain-to-S ource V oltage (V )
6
1
T = 2 5°C
J
7
4.5 V
V
2 0µ s P U L S E W ID TH
2 0µ s P U L S E W ID T H
T = 25 °C
T
DS
C
J
T = 1 7 5°C
= 25°C
= 2 5V
J
1 0
8
9
1 0 0
1 0
A
A
1 0 0 0
1 0 0
2.5
2.0
1.5
1.0
0.5
0.0
1 0
1
0.1
-60 -40 -20
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
TOP
BOTTOM 4.5V
I
D
= 4 6A
IRFZ46NS/LPbF
T , Junction T em perature (°C )
V
J
DS
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
0
, D rain-to-S ource V oltage (V )
Vs. Temperature
2 0
1
4 0
6 0
4.5 V
2 0µ s P U L S E W ID T H
T = 17 5°C
8 0
T
C
J
= 175°C
1 0 0 1 2 0 1 4 0 1 6 0 1 8 0
1 0
V
G S
= 10 V
3
1 0 0
A
A