IRFZ46NSTRLPBF International Rectifier, IRFZ46NSTRLPBF Datasheet - Page 4

• Manufacturer Part Number: IRFZ46NSTRLPBF
• Description: MOSFET N-CH 55V 53A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFZ46NSTRLPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 16.5 mOhm @ 28A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 53A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 72nC @ 10V
• Input Capacitance (ciss) @ Vds: 1696pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 53 A
• Power Dissipation: 120 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 48 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRFZ46NSTRLPBF; IRFZ46NSTRLPBFTR

IRFZ46NS/LPbF
1 0 0 0
4
1 0 0
2 8 0 0
2 4 0 0
2 0 0 0
1 6 0 0
1 2 0 0
1 0
8 0 0
4 0 0
1
0.4
0
1
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
T = 1 75 °C
J
C
C
C
V
V
iss
rss
oss
S D
0.8
D S
Drain-to-Source Voltage
, S ourc e-to-D rain V oltage (V )
V
C
C
C
, D rain-to-S ourc e V oltage (V )
G S
iss
rs s
o ss
Forward Voltage
T = 25 °C
J
= 0V ,
= C
= C
= C
1.2
g s
ds
g d
+ C
+ C
1 0
g d
g d
f = 1 M H z
1.6
, C
d s
S H O R TE D
2.0
V
G S
= 0V
2.4
1 0 0
A
A
1 0 0 0
1 0 0
2 0
1 6
1 2
1 0
8
4
0
1
0
1
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
I
T
T
S ing le P u lse
D
C
J
= 28 A
= 25 °C
= 17 5°C
O P E R A T IO N IN T H IS A R E A L IM ITE D
1 0
V
Gate-to-Source Voltage
D S
Q , T otal G ate C harge (nC )
G
, D rain-to-S ource V oltage (V )
2 0
B Y R
V
V
1 0
3 0
D S
D S
D S (o n)
= 44 V
= 28 V
FO R TE S T C IR C U IT
S E E FIG U R E 1 3
4 0
www.irf.com
5 0
1 0 µ s
1 0 0 µ s
1 m s
1 0 m s
1 0 0
6 0
A
A