IRFZ46NSTRLPBF International Rectifier, IRFZ46NSTRLPBF Datasheet - Page 7
IRFZ46NSTRLPBF
Manufacturer Part Number
IRFZ46NSTRLPBF
Description
MOSFET N-CH 55V 53A D2PAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRFZ46NSTRLPBF.pdf
(11 pages)
Specifications of IRFZ46NSTRLPBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
16.5 mOhm @ 28A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
53A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
72nC @ 10V
Input Capacitance (ciss) @ Vds
1696pF @ 25V
Power - Max
3.8W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
53 A
Power Dissipation
120 W
Mounting Style
SMD/SMT
Gate Charge Qg
48 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRFZ46NSTRLPBF
IRFZ46NSTRLPBFTR
IRFZ46NSTRLPBFTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
www.irf.com
Re-Applied
Voltage
Reverse
Recovery
Current
+
-
R
G
D.U.T
*
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
V
GS
P.W.
= 5V for Logic Level Devices
SD
DS
Fig 14. For N-Channel HEXFETS
Waveform
Waveform
Peak Diode Recovery dv/dt Test Circuit
Ripple ≤ 5%
Body Diode
Period
Body Diode Forward
+
-
• dv/dt controlled by R
• Driver same type as D.U.T.
• I
• D.U.T. - Device Under Test
SD
Diode Recovery
Current
controlled by Duty Factor "D"
Circuit Layout Considerations
dv/dt
Forward Drop
• Ground Plane
• Low Stray Inductance
• Low Leakage Inductance
di/dt
Current Transformer
D =
-
G
Period
P.W.
+
IRFZ46NS/LPbF
V
V
I
SD
GS
DD
=10V
+
-
V
DD
*
7