STB30NF10T4 STMicroelectronics, STB30NF10T4 Datasheet

MOSFET N-CH 100V 35A D2PAK

STB30NF10T4

Manufacturer Part Number
STB30NF10T4
Description
MOSFET N-CH 100V 35A D2PAK
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet

Specifications of STB30NF10T4

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
45 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
35A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
55nC @ 10V
Input Capacitance (ciss) @ Vds
1180pF @ 25V
Power - Max
115W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.045 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
10 S
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
35 A
Power Dissipation
115000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
15A
Drain Source Voltage Vds
100V
On Resistance Rds(on)
38mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-6550-2
STB30NF10T4

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STB30NF10T4@@@@@@
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Part Number:
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Order codes
General features
Description
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
Applications
June 2006
STP30NF10FP
Exceptional dv/dt capability
100% avalanche tested
Application oriented characterization
Switching application
STB30NF10
STP30NF10
Type
STB30NF10T4
STP30NF10FP
STP30NF10
Sales type
N-channel 100V - 0.038Ω - 35A - D
V
100V
100V
100V
DSS
<0.045Ω
<0.045Ω
<0.045Ω
R
Low gate charge STripFET™ II Power MOSFET
DS(on)
P30NF10FP
B30NF10
P30NF10
Marking
35A
35A
35A
I
D
STP30NF10 - STP30NF10FP
Rev 2
Internal schematic diagram
TO-220
TO-220FP
Package
TO-220
D
2
2
PAK
PAK/TO-220/TO-220FP
1
2
3
TO-220FP
STB30NF10
1
Tape & reel
Packaging
2
3
Tube
Tube
D
2
PAK
1
www.st.com
3
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STB30NF10T4 Summary of contents

Page 1

... Applications ■ Switching application Order codes Sales type STB30NF10T4 STP30NF10 STP30NF10FP June 2006 STP30NF10 - STP30NF10FP Low gate charge STripFET™ II Power MOSFET I DS(on) D ...

Page 2

Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 3

STB30NF10 - STP30NF10 - STP30NF10FP 1 Electrical ratings Table 1. Absolute maximum ratings Symbol V Drain-source voltage ( Drain-gate voltage (R DGR V Gate- source voltage GS I Drain current (continuous Drain current (continuous) ...

Page 4

Electrical characteristics 2 Electrical characteristics (T =25°C unless otherwise specified) CASE Table 3. On/off states Symbol Drain-source V (BR)DSS breakdown voltage Zero gate voltage I DSS drain current (V Gate-body leakage I GSS current (V V Gate threshold voltage GS(th) ...

Page 5

STB30NF10 - STP30NF10 - STP30NF10FP Table 5. Source drain diode Symbol Source-drain current I SD Source-drain current (1) I SDM (pulsed) (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery ...

Page 6

Electrical characteristics 2.1 Electrical characteristics (curves) Figure 1. Safe operating area for TO- 2 220/D PAK Figure 3. Safe operating area for TO-220FP Figure 5. Output characterisics 6/16 STB30NF10 - STP30NF10 - STP30NF10FP Figure 2. Thermal impedance for TO- 2 ...

Page 7

STB30NF10 - STP30NF10 - STP30NF10FP Figure 7. Transconductance Figure 9. Gate charge vs gate-source voltage Figure 10. Capacitance variations Figure 11. Normalized gate threshold voltage vs temperature Electrical characteristics Figure 8. Static drain-source on resistance Figure 12. Normalized on resistance ...

Page 8

Electrical characteristics Figure 13. Source-drain diode forward characteristics 8/16 STB30NF10 - STP30NF10 - STP30NF10FP Figure 14. Normalized B VDSS vs temperature ...

Page 9

STB30NF10 - STP30NF10 - STP30NF10FP 3 Test circuit Figure 15. Switching times test circuit for resistive load Figure 17. Test circuit for inductive load switching and diode recovery times Figure 19. Unclamped inductive waveform Figure 16. Gate charge test circuit ...

Page 10

Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package ...

Page 11

STB30NF10 - STP30NF10 - STP30NF10FP DIM PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. MIN. TYP MAX. 4.4 4.6 2.49 2.69 ...

Page 12

Package mechanical data DIM Ø 12/16 STB30NF10 - STP30NF10 - STP30NF10FP TO-220FP MECHANICAL DATA mm. MIN. TYP MAX. 4.4 4.6 2.5 2.7 2.5 2.75 ...

Page 13

STB30NF10 - STP30NF10 - STP30NF10FP DIM L20 L30 øP Q TO-220 MECHANICAL DATA mm. MIN. TYP MAX. 4.40 4.60 0.61 0.88 1.15 1.70 0.49 0.70 15.25 15.75 ...

Page 14

Packaging mechanical data 5 Packaging mechanical data 2 D PAK FOOTPRINT TAPE MECHANICAL DATA mm DIM. MIN. MAX. A0 10.5 10.7 B0 15.7 15.9 D 1.5 1.6 D1 1.59 1.61 E 1.65 1.85 F 11.4 11.6 K0 4.8 5.0 P0 ...

Page 15

STB30NF10 - STP30NF10 - STP30NF10FP 6 Revision history Table 6. Revision history Date 21-Jun-2004 26-Jun-2006 Revision 1 First version 2 New template, no content change Revision history Changes 15/16 ...

Page 16

... Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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