ATP104-TL-H SANYO, ATP104-TL-H Datasheet - Page 2
![MOSFET P-CH 30V 75A ATPAK](/photos/5/52/55290/atp108-tl-h_sml.jpg)
ATP104-TL-H
Manufacturer Part Number
ATP104-TL-H
Description
MOSFET P-CH 30V 75A ATPAK
Manufacturer
SANYO
Datasheet
1.ATP104-TL-H.pdf
(4 pages)
Specifications of ATP104-TL-H
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8.4 mOhm @ 38A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
75A
Gate Charge (qg) @ Vgs
76nC @ 10V
Input Capacitance (ciss) @ Vds
3950pF @ 10V
Power - Max
60W
Mounting Type
Surface Mount
Package / Case
ATPAK (2 leads+tab)
Transistor Polarity
P Channel
Drain Source Voltage Vds
-30V
On Resistance Rds(on)
6.4mohm
Rds(on) Test Voltage Vgs
-10V
Voltage Vgs Max
20V
Transistor Case Style
ATPAK
No. Of Pins
3
Current Id
RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Vgs(th) (max) @ Id
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
869-1074-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
ATP104-TL-H
Manufacturer:
ON Semiconductor
Quantity:
1 050
Continued from preceding page.
Package Dimensions
unit : mm (typ)
7057-001
Switching Time Test Circuit
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
--10V
P.G
0V
PW=10μs
D.C.≤1%
V IN
0.8
1
2.3
Parameter
6.5
4
2
2.3
V IN
50Ω
G
3
0.6
V DD = --15V
D
S
0.55
I D = --38A
R L =0.39Ω
ATP104
0.4
V GS (off)
| yfs |
R DS (on)1
R DS (on)2
Ciss
Coss
Crss
t d (on)
t r
t d (off)
t f
Qg
Qgs
Qgd
V SD
1.5
Symbol
V OUT
0.4
V DS =- -10V, I D =- -1mA
V DS =- -10V, I D =- -38A
I D =- -38A, V GS =- -10V
I D =- -19A, V GS =- -4.5V
V DS =--10V, f=1MHz
V DS =--10V, f=1MHz
V DS =--10V, f=1MHz
See specifi ed Test Circuit.
See specifi ed Test Circuit.
See specifi ed Test Circuit.
See specifi ed Test Circuit.
V DS =--15V, V GS =--10V, I D =--75A
V DS =--15V, V GS =--10V, I D =--75A
V DS =--15V, V GS =--10V, I D =--75A
I S =--75A, V GS =0V
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : ATPAK
ATP104
4.6
2.6
Conditions
0.4
min
--1.2
Ratings
typ
--1.02
3950
880
610
520
290
260
6.4
9.6
24
76
18
13
70
max
--2.6
13.5
--1.5
8.4
No. A1406-2/4
Unit
mΩ
mΩ
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
S
V
V