ATP108-TL-H SANYO, ATP108-TL-H Datasheet - Page 2

• Manufacturer Part Number: ATP108-TL-H
• Description: MOSFET P-CH 40V 70A ATPAK
• Manufacturer: SANYO

Specifications of ATP108-TL-H

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 10.4 mOhm @ 35A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 70A
• Gate Charge (qg) @ Vgs: 79.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 3850pF @ 20V
• Power - Max: 60W
• Mounting Type: Surface Mount
• Package / Case: ATPAK (2 leads+tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -
• Other names: 869-1076-2; ATP108-SPL

Continued from preceding page.
Package Dimensions
unit : mm (typ)
7057-001
Switching Time Test Circuit
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
--10V
P.G
0V
PW=10μs
D.C.≤1%
0.8
1
2.3
V IN
Parameter
6.5
4
2
2.3
V IN
3
50Ω
G
0.6
V DD = --20V
D
0.55
S
I D = --35A
R L =0.57Ω
0.4
V GS (off)
| yfs |
R DS (on)1
R DS (on)2
Ciss
Coss
Crss
t d (on)
t r
t d (off)
t f
Qg
Qgs
Qgd
V SD
ATP108
1.5
Symbol
V OUT
0.4
V DS =- -10V, I D =- -1mA
V DS =- -10V, I D =--35A
I D =- -35A, V GS =- -10V
I D =- -18A, V GS =- -4.5V
V DS =--20V, f=1MHz
V DS =--20V, f=1MHz
V DS =--20V, f=1MHz
See specifi ed Test Circuit.
See specifi ed Test Circuit.
See specifi ed Test Circuit.
See specifi ed Test Circuit.
V DS =--20V, V GS =--10V, I D =--70A
V DS =--20V, V GS =--10V, I D =--70A
V DS =--20V, V GS =--10V, I D =--70A
I S =--70A, V GS =0V
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : ATPAK
ATP108
4.6
2.6
Conditions
0.4
min
--1.5
Ratings
typ
--1.05
3850
11.5
79.5
560
390
340
340
290
19
20
15
65
8
max
--2.6
10.4
16.5
--1.5
No. A1604-2/4
Unit
mΩ
mΩ
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
S
V
V