STB11NK50ZT4 STMicroelectronics, STB11NK50ZT4 Datasheet - Page 8

• Manufacturer Part Number: STB11NK50ZT4
• Description: MOSFET N-CH 500V 10A D2PAK
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STB11NK50ZT4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 520 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 68nC @ 10V
• Input Capacitance (ciss) @ Vds: 1390pF @ 25V
• Power - Max: 125W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.52 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 77 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 10 A
• Power Dissipation: 125000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 4.5A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 480mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2451-2

Electrical characteristics
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Figure 14. Source-drain diode forward
Figure 16. Maximum avalanche energy vs
characteristics
temperature
Figure 15. Normalized B
STB11NK50Z - STP11NK50ZFP - STP11NK50Z
VDSS
vs temperature