STB200NF03T4 STMicroelectronics, STB200NF03T4 Datasheet - Page 3

• Manufacturer Part Number: STB200NF03T4
• Description: MOSFET N-CH 30V 120A D2PAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STB200NF03T4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.6 mOhm @ 60A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 140nC @ 10V
• Input Capacitance (ciss) @ Vds: 4950pF @ 25V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 60A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 3.2mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.0032 Ohms
• Forward Transconductance Gfs (max / Min): 200 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-6548-2; STB200NF03T4

STP200NF03 - STB200NF03 - STB200NF03-1
1
Electrical ratings
Table 1.
1. Value limited by package
2. Pulse width limited by safe operating area.
3. I
4. Starting T
Table 2.
1. for 10 sec. 1.6mm from case
Symbol
Rthj-case
Rthj-amb
dv/dt
Rthj-pcb
E
V
I
DM
SD
I
I
V
V
AS
T
P
D
D
DGR
T
DS
GS
stg
tot
T
(1)
(1)
j
≤ 120A, di/dt ≤ 400A/µs, V
(2)
(4)
J
(3)
j
= 25 °C, I
Drain-source voltage (V
Drain-gate voltage (R
Gate- source voltage
Drain current (continuous) at
T
Drain current (continuous) at
T
Drain current (pulsed)
Total dissipation at T
Derating factor
Peak diode recovery voltage slope
Single pulse avalanche energy
Storage temperature
Max. operating junction
temperature
Absolute maximum ratings
Thermal data
C
C
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Thermal resistance junction-pcb
Maximum lead temperature for soldering purpose
= 25°C
= 100°C
D
= 60A, V
Parameter
DD
≤ V
DD
(BR)DSS
C
= 25V
GS
= 25°C
GS
= 20 kΩ)
, T
= 0)
j
≤ T
JMAX
(1)
-55 to 175
Value
± 20
1.45
120
120
480
300
2.0
1.5
30
30
see curve
62.5
300
0.5
13
Electrical ratings
and
14
W/°C
Unit
V/ns
°C
°C/W
°C/W
W
V
V
V
A
A
A
J
°C
3/18