STB75NF20 STMicroelectronics, STB75NF20 Datasheet - Page 3

• Manufacturer Part Number: STB75NF20
• Description: MOSFET N-CH 200V 75A D2PAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STB75NF20

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 34 mOhm @ 37A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 84nC @ 10V
• Input Capacitance (ciss) @ Vds: 3260pF @ 25V
• Power - Max: 190W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.034 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 40 S
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 75 A
• Power Dissipation: 190000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 50 C
• Continuous Drain Current Id: 37A
• Drain Source Voltage Vds: 200V
• On Resistance Rds(on): 28mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5957-2

STB75NF20 - STP75NF20 - STW75NF20
1
Electrical ratings
Table 1.
1. I
Table 2.
1. When mounted on inch²FR-4 board (t < 10µs)
Table 3.
R
Symbol
Symbol
Symbol
thJ-pcb
I
SD
dv/dt
P
R
DM
Tstg
R
V
V
E
T
I
I
TOT
I
thJC
GS
thJA
T
DS
AR
D
D
AS
< 75A, di/dt < 400A/µs, V
J
(1)
l
(1)
Absolute maximum ratings
Thermal resistance
Drain-source voltage (V
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Derating factor
Peak diode recovery voltage slope
Total dissipation at T
Operating junction temperature
Storage temperture
Avalanche characteristics
Thermal resistance junction-case max
Thermal resistance junction-pcb max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering
purpose
Avalanche current, repetitive or not-repetitive
(pulse width limited by T
Single pulse avalanche energy
(starting T
J
= 25°C, Id= Iar, Vdd=50V)
DD
Parameter
< 160
Parameter
Parameter
C
= 25°C
GS
J
max)
= 0)
C
C
= 25°C
= 100°C
TO-220/D²PAK
62.5
34
Max value
-50 to 150
Value
Value
± 20
1.52
200
300
190
0.66
205
300
75
47
15
37
Electrical ratings
TO-247
40
--
W/°C
V/ns
°C/W
°C/W
°C/W
Unit
Unit
Unit
°C
W
mJ
°C
V
V
A
A
A
A
3/16