STB20NM50T4 STMicroelectronics, STB20NM50T4 Datasheet - Page 12

• Manufacturer Part Number: STB20NM50T4
• Description: MOSFET N-CH 550V 20A D2PAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STB20NM50T4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 250 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 550V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 56nC @ 10V
• Input Capacitance (ciss) @ Vds: 1480pF @ 25V
• Power - Max: 192W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.25 Ohms
• Forward Transconductance Gfs (max / Min): 10 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 20 A
• Power Dissipation: 192 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5312-2; Q1966796; STB20NM50T4

Package mechanical data
12/14
DIM.
G1
F1
F2
L2
L3
L4
L5
L6
L7
G
Ø
A
B
D
E
F
H
0.45
0.75
1.15
1.15
4.95
28.6
15.9
MIN.
4.4
2.5
2.5
2.4
9.8
2.9
10
9
3
STB20NM50 - STB20NM50-1 - STP20NM50 - STP20NM50FP
TO-220FP MECHANICAL DATA
mm.
TYP
16
MAX.
2.75
10.4
30.6
10.6
16.4
4.6
2.7
0.7
1.7
1.7
5.2
2.7
3.6
9.3
3.2
1
0.173
0.098
0.098
0.017
0.030
0.045
0.045
0.195
0.094
0.393
1.126
.0385
0.114
0.626
0.354
0.118
MIN.
0.630
TYP.
inch
0.181
0.106
0.108
0.027
0.039
0.067
0.067
0.204
0.106
0.409
1.204
0.417
0.141
0.645
0.366
0.126
MAX.