IXTY02N50D IXYS, IXTY02N50D Datasheet
IXTY02N50D
Manufacturer Part Number
IXTY02N50D
Description
MOSFET N-CH 500V 200MA DPAK
Manufacturer
IXYS
Datasheet
1.IXTY02N50D.pdf
(2 pages)
Specifications of IXTY02N50D
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Depletion Mode
Rds On (max) @ Id, Vgs
30 Ohm @ 50mA, 0V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
200mA
Vgs(th) (max) @ Id
5V @ 25µA
Input Capacitance (ciss) @ Vds
120pF @ 25V
Power - Max
1.1W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Vds, Max, (v)
500
Id(on), Min, (a)
0.2
Rds(on), Max, (?)
30
Vgs(off), Max, (v)
-5
Ciss, Typ, (pf)
120
Crss, Typ, (pf)
5
Qg, Typ, (nc)
5
Pd, (w)
25
Rthjc, Max, (ºc/w)
-
Package Style
TO-252AA (D PAK)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXTY02N50D
Manufacturer:
IXYS
Quantity:
18 000
High Voltage MOSFET
N-Channel, Depletion Mode
Preliminary Data Sheet
Symbol
V
V
V
V
I
I
P
T
T
T
T
T
M
Weight
Symbol
V
V
I
I
R
I
© 2006 IXYS All rights reserved
DM
GSS
DSX(off)
D(on)
DSS
J
JM
stg
L
ISOL
DGX
GS
GSM
D
GS(off)
DSX
DSX
DS(on)
d
(T
J
= 25°C, unless otherwise specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
1.6 mm (0.063 in.) from case for 10 s
Plastic case for 10 s (IXTU)
Mounting torque
Test Conditions
V
V
V
V
V
V
J
J
C
C
C
A
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C
= 25°C; T
= 25°C
= 25°C
= 25°C, pulse width limited by T
= -10 V, I
= 25V, I
= ± 20 V
= V
= 0 V, I
= 0 V, V
DSS
, V
D
D
J
DC
DS
= 50 mA
= 25°C to 150°C
D
GS
= 25 μA
, V
= 25 μA
= -10 V
= 25V
DS
= 0
Note 1
T
Note 1
TO-220
TO-220
TO-251
TO-252
J
= 125°C
J
IXTP 02N50D
IXTU 02N50D
IXTY 02N50D
min.
500
-2.5
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
250
1.3 / 10
typ.
20
± 20
± 30
500
500
200
800
150
300
300
1.1
0.8
0.8
25
4
max.
±100
250
10
30
-5
Nm/lb.
mA
mA
mA
°C
°C
°C
°C
°C
nA
μA
μA
W
W
Ω
V
V
V
V
g
g
g
V
V
TO-220 (IXTP)
TO-251 (IXTU)
TO-252 (IXTY)
Pins: 1 - Gate
Features
Applications
Normally ON mode
Low R
Rugged polysilicon gate cell structure
Fast switching speed
G
Level shifting
Triggers
Solid state relays
Current regulators
V
I
R
D
D25
S
3 - Source TAB - Drain
DSS
DS(on)
DS (on)
G D
G
S
S
HDMOS
= 500
= 200 mA
=
2 - Drain
D (TAB)
TM
30 Ω Ω Ω Ω Ω
D (TAB)
process
98861A (01/06)
D (TAB)
V
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IXTY02N50D Summary of contents
Page 1
... GSS -10 V DSX(off) DS DSS DS(on 25V D(on © 2006 IXYS All rights reserved IXTP 02N50D IXTU 02N50D IXTY 02N50D Maximum Ratings 500 500 ± 20 ± 30 200 800 J 25 1.1 -55 ... +150 150 -55 ... +150 300 300 TO-220 1 TO-220 4 TO-251 0.8 TO-252 0.8 Characteristic Values min ...
Page 2
... Note1: Pulse test, t ≤ 300 μs, duty cycle d ≤ TO-252 AA Outline Pins Gate 2 - Drain 3 - Source TAB - Drain IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 ...