IXTP3N50P IXYS, IXTP3N50P Datasheet - Page 5

• Manufacturer Part Number: IXTP3N50P
• Description: MOSFET N-CH 500V 3.6A TO-220
• Manufacturer: IXYS
• Series: PolarHV™r

Specifications of IXTP3N50P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Vgs(th) (max) @ Id: 5.5V @ 50µA
• Gate Charge (qg) @ Vgs: 9.3nC @ 10V
• Input Capacitance (ciss) @ Vds: 409pF @ 25V
• Power - Max: 70W
• Mounting Type: Through Hole
• Package / Case: TO-220
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2 Ohms
• Forward Transconductance Gfs (max / Min): 3.5 s
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 3.6 A
• Power Dissipation: 70 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 3.6
• Rds(on), Max, Tj=25°c, (?): 2
• Ciss, Typ, (pf): 409
• Qg, Typ, (nc): 9.3
• Trr, Typ, (ns): 400
• Pd, (w): 70
• Rthjc, Max, (k/w): 1.8
• Package Style: TO-220
• For Use With: EVLB002 - KIT EVAL NONDIM LIGHT BALLASTEVLB001 - KIT EVAL DIMMABLE LIGHT BALLAST
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXTA 3N50P IXTP 3N50P
IXTY 3N50P
Fig. 13. Maximum Transient Thermal Resistance
10.0
1.0
0.1
0.1
1
10
100
1000
P ulse Width - m illiseconds
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