IXTP44N10T IXYS, IXTP44N10T Datasheet - Page 2

• Manufacturer Part Number: IXTP44N10T
• Description: MOSFET N-CH 100V 44A TO-220
• Manufacturer: IXYS
• Series: TrenchMV™r

Specifications of IXTP44N10T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 30 mOhm @ 22A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 44A
• Vgs(th) (max) @ Id: 4.5V @ 25µA
• Gate Charge (qg) @ Vgs: 33nC @ 10V
• Input Capacitance (ciss) @ Vds: 1262pF @ 25V
• Power - Max: 130W
• Mounting Type: Through Hole
• Package / Case: TO-220
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.03 Ohms
• Drain-source Breakdown Voltage: 100 V
• Continuous Drain Current: 44 A
• Power Dissipation: 130 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 100
• Id(cont), Tc=25°c, (a): 44
• Rds(on), Max, Tj=25°c, (?): 0.03
• Ciss, Typ, (pf): 1567
• Qg, Typ, (nc): 27.4
• Trr, Typ, (ns): 60
• Trr, Max, (ns): -
• Pd, (w): 130
• Rthjc, Max, (k/w): 1.15
• Package Style: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
T
I
I
V
t
IXYS MOSFETs and IGBTs are covered by 4,835,592
SM
(T
d(on)
d(off)
f
S
r
rr
one or moreof the following U.S. patents:
IXYS reserves the right to change limits, test conditions, and dimensions.
fs
J
oss
thJC
thCS
SD
iss
rss
g(on)
gs
gd
J
= 25° C unless otherwise specified)
TO-252 (IXTY) Outline
= 25° C unless otherwise specified)
Test Conditions
V
V
Resistive Switching Times
V
R
V
TO-220
Test Conditions
V
Repetitive
I
I
V
F
F
DS
GS
GS
GS
GS
R
G
= 25 A, V
= 25 A, -di/dt = 100 A/µs
= 50 V, V
= 18 Ω (External)
= 10 V; I
= 10 V, V
= 0 V
= 0 V, V
= 10 V, V
1 Anode
2 NC
3 Anode
4 Cathode
GS
DS
D
GS
DS
= 0.5 I
DS
= 0 V, Note 1
= 25 V, f = 1 MHz
= 0 V
= 0.5 V
= 0.5 V
4,850,072
4,881,106
D25
, Note 1
DSS
DSS
, I
4,931,844
5,017,508
5,034,796
, I
D
D
= 10 A
= 10 A
Dim.
D1
A1
A2
b1
b2
E1
e1
L1
L2
L3
c1
A
D
E
H
b
c
e
L
5,049,961
5,063,307
5,187,117
2.19 2.38
0.89 1.14
0.64 0.89
0.76 1.14
5.21 5.46
0.46 0.58
0.46 0.58
5.97 6.22
4.32 5.21
6.35 6.73
4.32 5.21
9.40 10.42
0.51 1.02
0.64 1.02
0.89 1.27
2.54 2.92
Min. Max.
2.28 BSC
4.57 BSC
Millimeter
0 0.13
Min.
Min.
5,237,481
5,381,025
5,486,715
Characteristic Values
13
Characteristic Values
0.086
0.035
0.025
0.030
0.205
0.018
0.018
0.235
0.170
0.250
0.170
0.370
0.020
0.025
0.035
0.100
Min.
0.090 BSC
0.180 BSC
Inches
0
1262
Typ.
Typ.
190
100
0.094
0.045
0.005
0.035
0.045
0.215
0.023
0.023
0.245
0.205
0.265
0.205
0.410
0.040
0.040
0.050
0.115
0.5
Max.
21
43
21
47
36
32
33
10
11
6,162,665
6,259,123 B1
6,306,728 B1
Max.
Max.
1.15 °C/W
140
1.1
44
°C/W
6,404,065 B1
6,534,343
6,583,505
nC
nC
nC
pF
pF
pF
n s
n s
n s
ns
ns
S
V
A
A
Notes:
1.
2. On through-hole packages, R
TO-220 (IXTP) Outline
The product presented herein is under
development. The Technical Specifica-
tions offered are derived from data
gathered during objective characteriza-
tions of preliminary engineering lots; but
also may yet contain some information
supplied during a pre-production design
evaluation. IXYS reserves the right to
change limits, test conditions, and
dimensions without notice.
5 mm or less from the package body.
Kelvin test contact location must be
6,683,344
6,710,405B2
6,710,463
Pulse test: t ≤ 300 µs, duty cycle
d ≤ 2 %;
PRELIMINARY TECHNICAL
Pins: 1 - Gate
3 - Source 4, TAB - Drain
INFORMATION
6,727,585
6,759,692
6771478 B2
IXTP44N10T
IXTY44N10T
2 - Drain
7,005,734 B2
7,063,975 B2
7,071,537
DS(on)