IXTP08N50D2 IXYS, IXTP08N50D2 Datasheet - Page 2

• Manufacturer Part Number: IXTP08N50D2
• Description: MOSFET N-CH 500V 800MA TO220AB
• Manufacturer: IXYS

Specifications of IXTP08N50D2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Depletion Mode
• Rds On (max) @ Id, Vgs: 4.6 Ohm @ 400mA, 0V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 800mA
• Gate Charge (qg) @ Vgs: 12.7nC @ 5V
• Input Capacitance (ciss) @ Vds: 312pF @ 25V
• Power - Max: 60W
• Mounting Type: Through Hole
• Package / Case: TO-220AB
• Vds, Max, (v): 500
• Id(on), Min, (a): 0.8
• Rds(on), Max, (?): 4.6
• Vgs(off), Max, (v): -4
• Ciss, Typ, (pf): 312
• Crss, Typ, (pf): 11
• Qg, Typ, (nc): 12.7
• Pd, (w): 60
• Rthjc, Max, (ºc/w): -
• Package Style: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -
• Lead Free Status / Rohs Status: Details

Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Safe-Operating-Area Specification
Symbol
SOA
Source-Drain Diode
Symbol
(T
V
t
I
Q
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
RM
d(on)
r
d(off)
f
rr
fs
SD
iss
oss
rss
thJC
thCS
g(on)
gs
gd
RM
J
J
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
= 25°C, Unless Otherwise Specified)
= 25°C, Unless Otherwise Specified)
TO-263 (IXTA) Outline
V
V
Resistive Switching Times
V
R
V
TO-220
Test Conditions
V
I
I
V
Test Conditions
Test Conditions
F
F
DS
GS
GS
GS
DS
R
G
= 800mA, V
= 800mA, -di/dt = 100A/μs
= 100V, V
PRELIMINARY TECHNICAL INFORMATION
= 30V, I
= -10V, V
= ±5V, V
= 10Ω (External)
= 5V, V
= 400V, I
1. Gate
2. Drain
3. Source
4. Drain
DS
D
DS
GS
= 400mA, Note 1
DS
D
= 250V, I
GS
= 250V, I
= 90mA, T
= -10V
4,835,592
4,881,106
= 25V, f = 1MHz
= -10V, Note 1
D
D
4,931,844
5,017,508
5,034,796
= 400mA
C
= 400mA
= 75°C, Tp = 5s
Dim.
A
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
5,049,961
5,063,307
5,187,117
14.61
Min.
4.06
0.51
1.14
0.40
1.14
8.64
8.00
9.65
6.22
2.54
2.29
1.02
1.27
Millimeter
10.41
15.88
Max.
BSC
4.83
0.99
1.40
0.74
1.40
9.65
8.89
8.13
2.79
1.40
1.78
5,237,481
5,381,025
5,486,715
Characteristic Values
340
Min.
Characteristic Values
Characteristic Values
Min.
Min.
Min.
.160
.020
.045
.016
.045
.340
.280
.380
.270
.100
.575
.090
.040
.050
36
Inches
6,162,665
6,259,123 B1
6,306,728 B1
Max.
BSC
.190
.039
.055
.029
.055
.380
.320
.405
.320
.625
.110
.055
.070
12.7
0.50
Typ.
570
1.04
312
1.2
7.3
400
Typ.
Typ.
35
11
28
54
35
52
5.2
0.8
Max.
2.08 °C/W
6,404,065 B1
6,534,343
6,583,505
Max.
Max.
1.3
°C/W
IXTY08N50D2
mS
nC
nC
nC
μC
pF
pF
pF
ns
ns
ns
ns
ns
W
V
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
TO-220 (IXTP) Outline
TO-252 AA (IXTY) Outline
Dim.
Pins: 1 - Gate
A1
A2
b1
b2
D1
E1
e1
L1
L2
L3
c1
6,727,585
6,771,478 B2 7,071,537
A
D
E
H
b
c
e
L
2.19
0.89
0.64
0.76
5.21
0.46
0.46
5.97
4.32
6.35
4.32
9.40 10.42
0.51
0.64
0.89
2.54
Millimeter
Min. Max.
2.28 BSC
4.57 BSC
3 - Source
0
2.38
1.14
0.13
0.89
1.14
5.46
0.58
0.58
6.22
5.21
6.73
5.21
1.02
1.02
1.27
2.92
7,005,734 B2
7,063,975 B2
IXTA08N50D2
IXTP08N50D2
0.086
0.035
0.025
0.030
0.205
0.018
0.018
0.235
0.170
0.250
0.170
0.370
0.020
0.025
0.035
0.100
Min.
0.090 BSC
0.180 BSC
1. Gate
2. Drain
3. Source
4. Drain
Inches
2 - Drain
4 - Drain
0
Bottom Side
7,157,338B2
0.094
0.045
0.005
0.035
0.045
0.215
0.023
0.023
0.245
0.205
0.265
0.205
0.410
0.040
0.040
0.050
0.115
Max.