IRLU8203PBF International Rectifier, IRLU8203PBF Datasheet - Page 2

• Manufacturer Part Number: IRLU8203PBF
• Description: MOSFET N-CH 30V 110A I-PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLU8203PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6.8 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 110A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 50nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2430pF @ 15V
• Power - Max: 140W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRLU8203PBF

Diode Characteristics
IRLR/U8203PbF
Dynamic @ T
Avalanche Characteristics
Static @ T
V
∆V
R
V
Symbol
g
Q
Q
Q
Q
t
t
t
t
C
C
C
Symbol
E
I
V
Symbol
I
I
t
Q
t
Q
I
I
d(on)
d(off)
AR
DSS
r
f
S
SM
rr
rr
GSS
2
fs
AS
(BR)DSS
GS(th)
SD
DS(on)
iss
oss
rss
g
gs
gd
oss
rr
rr
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain-to-Source Leakage Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
Static Drain-to-Source On-Resistance
Diode Forward Voltage
J
= 25°C (unless otherwise specified)
J
Single Pulse Avalanche Energy‚
Avalanche Current
= 25°C (unless otherwise specified)
Parameter
Parameter
Parameter
Parameter
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
1.0
Min. Typ. Max. Units
Min. Typ. Max. Units
30
35
–––
–––
––– 0.75
––– 0.65 –––
–––
–––
–––
–––
0.027
2430 –––
1200 –––
–––
–––
–––
–––
–––
––– -200
–––
250
–––
–––
5.6
7.1
5.7
33
17
23
15
99
30
69
48
62
49
67
110
–––
–––
100
200
–––
–––
–––
–––
–––
–––
120
100
3.0
8.5
1.3
20
50
25
34
6.8
9.0
72
92
74
„
V/°C
mΩ
µA
nA
nC
ns
pF
nC
nC
ns
ns
V
V
S
V
Typ.
–––
–––
I
V
V
V
V
V
V
V
V
V
V
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
di/dt = 100A/µs ƒ
di/dt = 100A/µs ƒ
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
T
T
D
Reference to 25°C, I
D
GS
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
GS
DD
GS
GS
DS
J
J
J
J
G
= 12A
= 12A
= 25°C, I
= 125°C, I
= 25°C, I
= 125°C, I
= 6.8Ω
= V
= 24V, V
= 24V, V
= 0V, I
= 10V, I
= 4.5V, I
= 20V
= -20V
= 15V, I
= 24V
= 4.5V ƒ
= 0V, V
= 15V
= 4.5V
= 0V
= 15V
GS
, I
D
S
F
DS
D
D
D
Conditions
= 250µA
D
GS
GS
S
F
Conditions
Conditions
ƒ
= 12A, V
= 12A, V
= 250µA
= 15A
= 12A
= 12A
= 12A, V
= 12A, V
= 10V
Max.
= 0V, T
310
= 0V
30
www.irf.com
D
GS
R
ƒ
= 1mA
ƒ
=15V
J
GS
R
=15V
= 125°C
= 0V ƒ
G
= 0V ƒ
Units
mJ
A
D
S