IRLU8203PBF International Rectifier, IRLU8203PBF Datasheet - Page 4

• Manufacturer Part Number: IRLU8203PBF
• Description: MOSFET N-CH 30V 110A I-PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLU8203PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6.8 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 110A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 50nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2430pF @ 15V
• Power - Max: 140W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRLU8203PBF

IRLR/U8203PbF
10000
4
1000
100
1000
100
0.1
10
Fig 5. Typical Capacitance Vs.
1
Fig 7. Typical Source-Drain Diode
1
0.2
Drain-to-Source Voltage
T = 175
J
V DS , Drain-to-Source Voltage (V)
V
0.4
SD
Forward Voltage
,Source-to-Drain Voltage (V)
°
C
V GS = 0V,
C iss = C gs + C gd , C ds
C rss = C gd
C oss = C ds + C gd
0.6
Coss
Crss
10
T = 25
0.8
Ciss
J
f = 1 MHZ
°
1.0
C
V
GS
SHORTED
1.2
= 0 V
100
1.4
1000
100
Fig 8. Maximum Safe Operating Area
10
6
5
4
3
2
1
0
1
0
Fig 6. Typical Gate Charge Vs.
I
D
0
Tc = 25°C
Tj = 175°C
Single Pulse
=
12A
Gate-to-Source Voltage
V DS , Drain-toSource Voltage (V)
Q , Total Gate Charge (nC)
G
10
1
OPERATION IN THIS AREA
LIMITED BY R DS (on)
V
V
V
DS
DS
DS
20
10
= 24V
= 15V
= 6V
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10msec
100µsec
1msec
100
30
1000
40