IRLU8203PBF International Rectifier, IRLU8203PBF Datasheet - Page 6

• Manufacturer Part Number: IRLU8203PBF
• Description: MOSFET N-CH 30V 110A I-PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLU8203PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6.8 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 110A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 50nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2430pF @ 15V
• Power - Max: 140W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRLU8203PBF

IRLR/U8203PbF
Fig 12a. Unclamped Inductive Test Circuit
6
Fig 12b. Unclamped Inductive Waveforms
Fig 13a. Basic Gate Charge Waveform
I
AS
V
R G
20V
G
V DS
Q
t p
GS
t p
I AS
D.U.T
0.01 Ω
L
Charge
Q
Q
V
GD
G
(BR)DSS
15V
DRIVER
+
-
V DD
A
800
600
400
200
0
25
Fig 12c. Maximum Avalanche Energy
Fig 13b. Gate Charge Test Circuit
Starting Tj, Junction Temperature
50
12V
V
GS
Vs. Drain Current
Same Type as D.U.T.
Current Regulator
.2µF
75
50KΩ
3mA
Current Sampling Resistors
.3µF
100
I
G
TOP
BOTTOM
125
www.irf.com
D.U.T.
I
D
( C)
°
150
+
-
V
DS
12A
21A
30A
I D
175