IRLU8203PBF International Rectifier, IRLU8203PBF Datasheet - Page 3

• Manufacturer Part Number: IRLU8203PBF
• Description: MOSFET N-CH 30V 110A I-PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLU8203PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6.8 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 110A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 50nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2430pF @ 15V
• Power - Max: 140W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRLU8203PBF

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1000.00
100.00
10.00
1000
Fig 3. Typical Transfer Characteristics
Fig 1. Typical Output Characteristics
100
10
1
2.0
0.1
TOP
BOTTOM 2.5V
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
VGS
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
T J = 25°C
3.0
1
2.5V
20µs PULSE WIDTH
Tj = 25°C
V DS = 15V
20µs PULSE WIDTH
T J = 175°C
4.0
10
100
5.0
1000
100
10
Fig 2. Typical Output Characteristics
1
0.1
Fig 4. Normalized On-Resistance
2.0
1.5
1.0
0.5
0.0
TOP
BOTTOM 2.5V
-60
I
D
-40
=
IRLR/U8203PbF
V DS , Drain-to-Source Voltage (V)
30A
VGS
-20
10V
Vs. Temperature
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
T , Junction Temperature
J
0
1
20
40
60
2.5V
20µs PULSE WIDTH
Tj = 175°C
80
10
100 120 140 160 180
( C)
V
°
GS
=
10V
3
100