IXTP28P065T IXYS, IXTP28P065T Datasheet - Page 4

• Manufacturer Part Number: IXTP28P065T
• Description: MOSFET P-CH 65V 28A TO-220
• Manufacturer: IXYS
• Series: TrenchP™r

Specifications of IXTP28P065T

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 45 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 65V
• Current - Continuous Drain (id) @ 25° C: 28A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 46nC @ 10V
• Input Capacitance (ciss) @ Vds: 2030pF @ 25V
• Power - Max: 83W
• Mounting Type: Through Hole
• Package / Case: TO-220
• Vdss, Max, (v): -65
• Id(cont), Tc=25°c, (a): -28
• Rds(on), Max, Tj=25°c, (?): 0.045
• Ciss, Typ, (pf): 2030
• Qg, Typ, (nc): 46
• Trr, Typ, (ns): 31
• Trr, Max, (ns): -
• Pd, (w): 83
• Rthjc, Max, (k/w): 1.5
• Package Style: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
100
-35
-30
-25
-20
-15
-10
-70
-60
-50
-40
-30
-20
-10
-5
0
0
-3.0
-0.4
0
f
-0.5
= 1 MHz
Fig. 9. Forward Voltage Drop of Intrinsic Diode
-3.5
-5
-0.6
-4.0
-10
-0.7
Fig. 7. Input Admittance
T
Fig. 11. Capacitance
J
-4.5
-15
= 125ºC
-0.8
T
J
V
V
= 125ºC
V
GS
SD
- 40ºC
DS
25ºC
-5.0
-0.9
- Volts
-20
- Volts
- Volts
-1.0
-5.5
T
-25
C iss
C oss
C rss
J
= 25ºC
-1.1
-6.0
-30
-1.2
-6.5
-35
-1.3
-7.0
-1.4
-40
-
100
-10
-
10
-9
-8
-7
-6
-5
-4
-3
-2
-1
-
24
20
16
12
0
1
8
4
0
-
0
1
0
R
T
T
Single Pulse
V
I
I
DS(on)
J
C
D
G
DS
5
= 150ºC
= 25ºC
-4
= -14A
= -1mA
= - 33V
Fig. 12. Forward-Bias Safe Operating Area
Limit
10
-8
Fig. 8. Transconductance
15
-12
Fig. 10. Gate Charge
Q
I
20
D
G
- Amperes
- NanoCoulombs
-16
V
DS
-
25
10
- Volts
-20
30
IXTA28P065T
IXTP28P065T
-24
35
T
-28
J
40
= - 40ºC
125ºC
25ºC
-32
45
10ms
100ms
100µs
1ms
25µs
-
-36
100
50