IXTY1R6N50D2 IXYS, IXTY1R6N50D2 Datasheet - Page 3
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IXTY1R6N50D2
Manufacturer Part Number
IXTY1R6N50D2
Description
MOSFET N-CH 500V 1.6A DPAK
Manufacturer
IXYS
Datasheet
1.IXTY1R6N50D2.pdf
(5 pages)
Specifications of IXTY1R6N50D2
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Depletion Mode
Rds On (max) @ Id, Vgs
2.3 Ohm @ 800mA, 0V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
1.6A
Gate Charge (qg) @ Vgs
23.7nC @ 5V
Input Capacitance (ciss) @ Vds
645pF @ 25V
Power - Max
100W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Vds, Max, (v)
500
Id(on), Min, (a)
1.6
Rds(on), Max, (?)
2.3
Vgs(off), Max, (v)
-4
Ciss, Typ, (pf)
645
Crss, Typ, (pf)
16.5
Qg, Typ, (nc)
23.7
Pd, (w)
100
Rthjc, Max, (ºc/w)
-
Package Style
TO-252
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Vgs(th) (max) @ Id
-
Lead Free Status / Rohs Status
Details
© 2009 IXYS CORPORATION, All Rights Reserved
1.E+00
1.E-01
1.E-02
1.E-03
1.E-04
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.0
0
0
Fig. 3. Output Characteristics @ T
Fig. 1. Output Characteristics @ T
0.5
1
100
Fig. 5. Drain Current @ T
1.0
200
2
V
V
DS
DS
V
DS
- Volts
V
- Volts
GS
1.5
- Volts
300
3
= 5V
3V
2V
1V
V
GS
-1V
-2V
0V
= 5V
2V
1V
2.0
J
400
4
= 100ºC
J
J
= 125ºC
= 25ºC
-1V
-2V
-3V
V
0V
GS
2.5
500
5
= -2.50V
-3.75V
-2.75V
-3.00V
-3.25V
-3.50V
-4.00V
600
3.0
6
1.E+08
1.E+07
1.E+06
1.E+05
1.E+04
1.E+03
1E+00
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
10
9
8
7
6
5
4
3
2
1
0
-4.2
0
0
Fig. 2. Extended Output Characteristics @ T
-4.0
IXTY1R6N50D2 IXTA1R6N50D2
Fig. 6. Dynamic Resistance vs. Gate Voltage
100
5
-3.8
Fig. 4. Drain Current @ T
-3.6
200
10
T
J
= 100ºC
-3.4
V
V
DS
DS
V
GS
- Volts
- Volts
300
-3.2
15
- Volts
T
IXTP1R6N50D2
J
-3.0
= 25ºC
400
20
J
= 25ºC
-2.8
∆
V
V
GS
DS
= 5V
= 350V - 100V
-1V
3V
-2V
V
-2.6
2V
1V
0V
GS
500
J
25
= - 2.25V
= 25ºC
- 2.50V
- 2.75V
- 3.00V
- 3.25V
- 3.50V
- 3.75V
- 4.00V
-2.4
-2.2
600
30