IXTP1R6N100D2 IXYS, IXTP1R6N100D2 Datasheet - Page 2

• Manufacturer Part Number: IXTP1R6N100D2
• Description: MOSFET N-CH 1000V 1.6A TP220AB
• Manufacturer: IXYS

Specifications of IXTP1R6N100D2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Depletion Mode
• Rds On (max) @ Id, Vgs: 10 Ohm @ 800mA, 0V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 1.6A
• Gate Charge (qg) @ Vgs: 27nC @ 5V
• Input Capacitance (ciss) @ Vds: 645pF @ 25V
• Power - Max: 100W
• Mounting Type: Through Hole
• Package / Case: TO-220AB
• Vds, Max, (v): 1000
• Id(on), Min, (a): 1.6
• Rds(on), Max, (?): 10
• Vgs(off), Max, (v): -4.5
• Ciss, Typ, (pf): 645
• Crss, Typ, (pf): 11
• Qg, Typ, (nc): 27
• Pd, (w): 100
• Rthjc, Max, (ºc/w): 1.25
• Package Style: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -
• Lead Free Status / Rohs Status: Details

Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Safe-Operating-Area Specification
Symbol
SOA
Source-Drain Diode
Symbol
(T
V
t
I
Q
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
RM
d(on)
r
d(off)
f
rr
fs
SD
iss
oss
rss
thJC
thCS
g(on)
gs
gd
RM
J
J
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
= 25°C, Unless Otherwise Specified)
= 25°C, Unless Otherwise Specified)
TO-263 (IXTA) Outline
V
V
Resistive Switching Times
V
R
V
TO-220
Test Conditions
V
I
Test Conditions
Test Conditions
I
V
F
F
DS
GS
GS
GS
DS
G
R
= 1.6A, V
= 1.6A, -di/dt = 100A/μs
PRELIMINARY TECHNICAL INFORMATION
= 100V, V
= 30V, I
= -10V, V
= ±5V, V
= 5Ω (External)
= 5V, V
= 800V, I
1. Gate
2. Drain
3. Source
4. Drain
DS
Bottom Side
D
GS
DS
= 0.8A, Note 1
GS
DS
D
= 500V, I
= -10V, Note 1
= 500V, I
= 75mA, T
4,835,592
4,881,106
= 25V, f = 1MHz
= -10V
D
D
4,931,844
5,017,508
5,034,796
= 0.8A
C
= 0.8A
= 75°C, Tp = 5s
Dim.
A
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
5,049,961
5,063,307
5,187,117
14.61
Min.
4.06
0.51
1.14
0.40
1.14
8.64
8.00
9.65
6.22
2.54
2.29
1.02
1.27
Millimeter
0
10.41
15.88
Max.
BSC
4.83
0.99
1.40
0.74
1.40
9.65
8.89
8.13
2.79
1.40
1.78
0.13
5,237,481
5,381,025
5,486,715
0.65
Characteristic Values
Min.
Characteristic Values
Characteristic Values
Min.
Min.
Min.
.160
.020
.045
.016
.045
.340
.280
.380
.270
.100
.575
.090
.040
.050
60
Inches
0
6,162,665
6,259,123 B1
6,306,728 B1
Max.
BSC
.190
.039
.055
.029
.055
.380
.320
.405
.320
.625
.110
.055
.070
.005
1.10
27.0
13.5
0.50
Typ.
9.96
4.80
645
1.6
970
Typ.
Typ.
43
11
27
65
34
41
0.8
Max.
1.25 °C/W
IXTY1R6N100D2 IXTA1R6N100D2
6,404,065 B1
6,534,343
6,583,505
Max.
Max.
1.3
°C/W
nC
nC
nC
μC
pF
pF
pF
ns
ns
ns
ns
ns
W
S
V
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
TO-220 (IXTP) Outline
TO-252 AA (IXTY) Outline
Dim.
Pins:
A1
A2
b1
b2
D1
E1
e1
L1
L2
L3
c1
6,727,585
6,771,478 B2 7,071,537
A
D
E
H
b
c
e
L
2.19
0.89
0.64
0.76
5.21
0.46
0.46
5.97
4.32
6.35
4.32
9.40 10.42
0.51
0.64
0.89
2.54
Millimeter
Min. Max.
2.28 BSC
4.57 BSC
1 - Gate
3 - Source
IXTP1R6N100D2
0
2.38
1.14
0.13
0.89
1.14
5.46
0.58
0.58
6.22
5.21
6.73
5.21
1.02
1.02
1.27
2.92
7,005,734 B2
7,063,975 B2
0.086
0.035
0.025
0.030
0.205
0.018
0.018
0.235
0.170
0.250
0.170
0.370
0.020
0.025
0.035
0.100
Min.
0.090 BSC
0.180 BSC
1. Gate
2. Drain
3. Source
4. Drain
Inches
2 - Drain
4 - Drain
0
Bottom Side
7,157,338B2
0.094
0.045
0.005
0.035
0.045
0.215
0.023
0.023
0.245
0.205
0.265
0.205
0.410
0.040
0.040
0.050
0.115
Max.