IXTP1R6N50D2 IXYS, IXTP1R6N50D2 Datasheet - Page 5
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IXTP1R6N50D2
Manufacturer Part Number
IXTP1R6N50D2
Description
MOSFET N-CH 500V 1.6A TO220AB
Manufacturer
IXYS
Datasheet
1.IXTY1R6N50D2.pdf
(5 pages)
Specifications of IXTP1R6N50D2
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Depletion Mode
Rds On (max) @ Id, Vgs
2.3 Ohm @ 800mA, 0V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
1.6A
Gate Charge (qg) @ Vgs
23.7nC @ 5V
Input Capacitance (ciss) @ Vds
645pF @ 25V
Power - Max
100W
Mounting Type
Through Hole
Package / Case
TO-220AB
Vds, Max, (v)
500
Id(on), Min, (a)
1.6
Rds(on), Max, (?)
2.3
Vgs(off), Max, (v)
-4
Ciss, Typ, (pf)
645
Crss, Typ, (pf)
16.5
Qg, Typ, (nc)
23.7
Pd, (w)
100
Rthjc, Max, (ºc/w)
-
Package Style
TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Vgs(th) (max) @ Id
-
Lead Free Status / Rohs Status
Details
© 2009 IXYS CORPORATION, All Rights Reserved
10,000
1,000
10.00
10.0
1.00
0.10
0.01
2.00
100
1.0
0.1
10
0.00001
10
0
R
DS(on)
T
T
Single Pulse
f
J
C
= 1 MHz
= 150ºC
= 25ºC
5
Limit
Fig. 15. Forward-Bias Safe Operating Area
10
Fig. 13. Capacitance
0.0001
15
@ T
V
V
DS
DS
C
100
- Volts
20
- Volts
= 25ºC
25
Fig. 17. Maximum Transient Thermal Resistance
Fig. 17. Maximum Transient Thermal Impedance
0.001
30
C rss
C iss
C oss
DC
35
100µs
1ms
10ms
100ms
Pulse Width - Seconds
1,000
40
0.01
10.0
1.0
0.1
-1
-2
-3
-4
-5
5
4
3
2
1
0
10
0
R
T
T
Single Pulse
V
I
I
DS(on)
J
C
D
G
DS
= 150ºC
= 75ºC
= 0.8A
= 10mA
IXTY1R6N50D2 IXTA1R6N50D2
= 250V
Limit
Fig. 16. Forward-Bias Safe Operating Area
5
0.1
Fig. 14. Gate Charge
Q
10
G
@ T
- NanoCoulombs
V
DS
C
100
- Volts
= 75ºC
IXTP1R6N50D2
15
1
DC
IXYS REF: T_1R6N50D2(2C)8-14-09
20
25µs
100µs
1ms
10ms
100ms
1,000
10
25