IXTA100N04T2 IXYS, IXTA100N04T2 Datasheet - Page 2

• Manufacturer Part Number: IXTA100N04T2
• Description: MOSFET N-CH 40V 100A TO-263
• Manufacturer: IXYS
• Series: TrenchT2™r

Specifications of IXTA100N04T2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 25.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 2690pF @ 25V
• Power - Max: 150W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.007 Ohms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 150 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 40
• Id(cont), Tc=25°c, (a): 100
• Rds(on), Max, Tj=25°c, (?): 0.007
• Ciss, Typ, (pf): 2690
• Qg, Typ, (nc): 25.5
• Trr, Typ, (ns): 34
• Pd, (w): 150
• Rthjc, Max, (k/w): 1.0
• Package Style: TO-263
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Notes: 1.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
(T
I
I
V
t
I
Q
S
SM
RM
d(on)
r
d(off)
f
rr
fs
SD
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
iss
oss
rss
thJC
thCH
g(on)
gs
gd
RM
J
J
= 25°C, unless otherwise specified)
= 25°C, unless otherwise specified)
2. On through-hole packages, R
location must be 5mm or less from the package body.
Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
V
Repetitive, Pulse width limited by T
V
Resistive Switching Times
V
R
V
V
I
I
-di/dt = 100A/μs
V
Test Conditions
TO-220
Test Conditions
F
F
DS
GS
GS
GS
R
GS
G
= 50A, V
= 50A, V
= 20V
PRELIMINARY TECHNICAL INFORMATION
= 10V, I
= 5Ω (External)
= 0V, V
= 10V, V
= 0V
= 10V, V
GS
GS
DS
D
DS
DS
= 0V
= 0.5 • I
= 0V, Note 1
= 25V, f = 1MHz
= 20V, I
= 0.5 • V
4,835,592
4,881,106
D25
D
, Note 1
DSS
4,931,844
5,017,508
5,034,796
= 0.5 • I
, I
DS(on)
D
= 0.5 • I
Kelvin test contact
D25
5,049,961
5,063,307
5,187,117
JM
D25
5,237,481
5,381,025
5,486,715
Min.
Min.
Characteristic Values
Characteristic Values
27
6,162,665
6,259,123 B1
6,306,728 B1
2690
Typ.
Typ.
25.5
0.50
1.44
24.5
12.0
15.8
490
105
8.0
5.7
5.2
6.4
34
45
Max.
Max.
1.0 °C/W
100
400
1.2
6,404,065 B1
6,534,343
6,583,505
°C/W
nC
nC
nC
pF
pF
pF
nC
ns
ns
ns
ns
ns
S
A
A
V
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
TO-220 (IXTP) Outline
TO-263 (IXTA) Outline
Pins: 1 - Gate
6,727,585
6,771,478 B2 7,071,537
3 - Source
IXTA100N04T2
IXTP100N04T2
7,005,734 B2
7,063,975 B2
2 - Drain
4 - Drain
7,157,338B2