STP4NK50ZD STMicroelectronics, STP4NK50ZD Datasheet - Page 4

• Manufacturer Part Number: STP4NK50ZD
• Description: MOSFET N-CH 500V 3A TO-220
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STP4NK50ZD

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.7 Ohm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 310pF @ 25V
• Power - Max: 45W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.7 Ohms
• Forward Transconductance Gfs (max / Min): 1.5 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 3 A
• Power Dissipation: 45 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Fall Time: 22 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 15.5 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5131-5

Electrical characteristics
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Electrical characteristics
(T
Table 4.
Table 5.
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. C
Table 6.
C
V
Symbol
Symbol
Symbol
R
CASE
V
oss eq
(BR)DSS
g
t
t
C
I
I
inceases from 0 to 80% V
DS(on)
C
C
Q
Q
d(on)
d(off)
GS(th)
DSS
GSS
fs
Q
oss
oss eq.
t
t
rss
iss
gs
gd
r
f
(1)
g
=25°C unless otherwise specified)
(2)
.
is defined as a constant equivalent capacitance giving the same charging time as C
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
Switching times
DS
= 0)
Parameter
Parameter
Parameter
GS
= 0)
DSS
STD4NK50ZD - STD4NK50ZD-1 - STF4NK50ZD - STP4NK50ZD
V
V
V
V
V
V
(see Figure 11)
V
R
(see Figure 18)
I
V
V
V
V
V
D
DS
DS
GS
GS
DD
GS
DD
G
DS
DS
GS
DS
GS
= 1mA, V
= 4.7Ω, V
= 0
= 0, V
= 400V, I
= V
= 10V, I
=15V, I
= 25V, f = 1 MHz,
= 250 V, I
Test condictions
=10V
= Max rating,
= Max rating @125°C
= ±20V
Test condictions
Test condictions
GS
DS
, I
D
D
GS
D
=0V to 400V
D
GS
= 1.5A
= 1.5A
= 50µA
D
= 0
= 3A
= 1.5A,
=10V
Min.
500
2.5
Min.
Min.
Typ.
Typ.
3.5
2.3
Typ.
15.5
310
1.5
9.5
49
10
33
12
23
22
3
7
oss
Max.
Max.
Max.
±
4.5
2.7
when V
50
10
1
DS
Unit
Unit
Unit
µA
µA
µA
nC
nC
nC
pF
pF
pF
pF
ns
ns
ns
ns
Ω
V
V
S