STP4NK50ZD STMicroelectronics, STP4NK50ZD Datasheet - Page 5

• Manufacturer Part Number: STP4NK50ZD
• Description: MOSFET N-CH 500V 3A TO-220
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STP4NK50ZD

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.7 Ohm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 310pF @ 25V
• Power - Max: 45W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.7 Ohms
• Forward Transconductance Gfs (max / Min): 1.5 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 3 A
• Power Dissipation: 45 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Fall Time: 22 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 15.5 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5131-5

STD4NK50ZD - STD4NK50ZD-1 - STF4NK50ZD - STP4NK50ZD
Table 7.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Table 8.
1.
BV
Symbol
Symbol
I
V
SDM
I
I
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
GSO
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
RRM
RRM
I
SD
Q
Q
SD
t
t
rr
rr
rr
rr
(2)
(1)
(1)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse Recovery Charge
Reverse recovery current
Gate-source braekdown
voltage
Source drain diode
Gate-source zener diode
Parameter
Parameter
I
I
di/dt = 100A/µs,
V
I
di/dt = 100A/µs,
V
I
SD
SD
SD
GS
DD
DD
Test condictions
Test condictions
= 3A, V
= 3A,
= 3A,
= ±1mA (open drain)
= 34V, Tj = 25°C
= 34V, Tj = 150°C
GS
=0
Electrical characteristics
Min
Min.
30
Typ.
3.82
140
118
260
Typ.
4.4
73
Max
Max
1.6
12
3
Unit
Unit
nC
nC
ns
ns
V
A
A
V
A
A
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