IXTA24P085T IXYS, IXTA24P085T Datasheet - Page 4

• Manufacturer Part Number: IXTA24P085T
• Description: MOSFET P-CH 85V 24A TO-263
• Manufacturer: IXYS
• Series: TrenchP™r

Specifications of IXTA24P085T

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 65 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 85V
• Current - Continuous Drain (id) @ 25° C: 24A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 41nC @ 10V
• Input Capacitance (ciss) @ Vds: 2090pF @ 25V
• Power - Max: 83W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Vdss, Max, (v): -85
• Id(cont), Tc=25°c, (a): -24
• Rds(on), Max, Tj=25°c, (?): 0.065
• Ciss, Typ, (pf): 2090
• Qg, Typ, (nc): 41
• Trr, Typ, (ns): 40
• Trr, Max, (ns): -
• Pd, (w): 83
• Rthjc, Max, (k/w): 1.5
• Package Style: TO-263
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
100
-36
-32
-28
-24
-20
-16
-12
-70
-60
-50
-40
-30
-20
-10
-8
-4
0
0
-3.0
-0.4
0
f
-0.5
= 1 MHz
Fig. 9. Forward Voltage Drop of Intrinsic Diode
-5
-3.5
-0.6
-10
-4.0
-0.7
Fig. 7. Input Admittance
T
Fig. 11. Capacitance
J
-15
= 125ºC
-0.8
V
-4.5
DS
V
V
GS
SD
T
- Volts
J
-0.9
- Volts
-20
= 125ºC
- Volts
- 40ºC
25ºC
-5.0
-1.0
C iss
C oss
C rss
-25
T
J
= 25ºC
-1.1
-5.5
-30
-1.2
-6.0
-35
-1.3
-6.5
-1.4
-40
-
-
100
-10
10
-
28
24
20
16
12
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
1
8
4
0
-
0
1
0
R
DS(on)
T
T
Single Pulse
V
I
I
J
C
D
G
DS
= 150ºC
-4
= 25ºC
= -12A
= -1mA
5
Limit
= - 43V
Fig. 12. Forward-Bias Safe Operating Area
100ms
-8
10
10ms
Fig. 8. Transconductance
-12
15
Fig. 10. Gate Charge
Q
I
-16
1ms
D
V
G
DS
- Amperes
- NanoCoulombs
20
- Volts
-
-20
10
25
100µs
-24
IXTA24P085T
IXTP24P085T
30
-28
T
J
= - 40ºC
25µs
35
-32
125ºC
25ºC
40
-36
-
100
-40
45