IXTA18P10T IXYS, IXTA18P10T Datasheet - Page 3

• Manufacturer Part Number: IXTA18P10T
• Description: MOSFET P-CH 100V 18A TO-263
• Manufacturer: IXYS
• Series: TrenchP™r

Specifications of IXTA18P10T

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 120 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 39nC @ 10V
• Input Capacitance (ciss) @ Vds: 2100pF @ 25V
• Power - Max: 83W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Vdss, Max, (v): -100
• Id(cont), Tc=25°c, (a): -18
• Rds(on), Max, Tj=25°c, (?): 0.12
• Ciss, Typ, (pf): 2100
• Qg, Typ, (nc): 39
• Trr, Typ, (ns): 62
• Trr, Max, (ns): -
• Pd, (w): 83
• Rthjc, Max, (k/w): 1.5
• Package Style: TO-263
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2010 IXYS CORPORATION, All Rights Reserved
-18
-16
-14
-12
-10
-18
-16
-14
-12
-10
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
-8
-6
-4
-2
-8
-6
-4
-2
0
0
0.0
0.0
0
V
-0.2
-5
GS
-0.5
= -10V
Fig. 3. Output Characteristics @ T
Fig. 1. Output Characteristics @ T
Fig. 5. R
-10
-0.4
-15
-1.0
-0.6
DS(on)
-20
-0.8
Drain Current
Normalized to I
-1.5
I
D
V
V
-25
DS
- Amperes
DS
T
V
J
-1.0
GS
- Volts
- Volts
= 125ºC
= -10V
-30
- 7V
- 9V
- 8V
V
-2.0
GS
-1.2
= -10V
-35
- 9V
- 8V
T
- 6V
- 5V
J
D
= 25ºC
-1.4
= - 9A vs.
-2.5
-40
J
J
= 125ºC
= 25ºC
-1.6
- 7V
- 6V
- 5V
-45
-3.0
-1.8
-50
-2.0
-3.5
-55
-20
-18
-16
-14
-12
-10
2.1
1.9
1.7
1.5
1.3
1.1
0.9
0.7
0.5
-70
-60
-50
-40
-30
-20
-10
-8
-6
-4
-2
0
0
-50
-50
0
Fig. 2. Extended Output Characteristics @ T
V
GS
-25
= -10V
-25
Fig. 4. R
-5
Fig. 6. Maximum Drain Current vs.
0
0
V
IXTY18P10T IXTA18P10T
GS
DS(on)
T
Junction Temperature
-10
J
= -10V
- Degrees Centigrade
T
Case Temperature
J
25
25
- Degrees Centigrade
Normalized to I
V
DS
-15
50
50
- Volts
- 9V
- 8V
- 7V
- 6V
- 5V
I
D
= -18A
75
75
-20
IXTP18P10T
D
= - 9A vs.
100
100
I
D
-25
J
= - 9A
= 25ºC
125
125
150
-30
150