IRLU3114ZPBF International Rectifier, IRLU3114ZPBF Datasheet - Page 3

• Manufacturer Part Number: IRLU3114ZPBF
• Description: MOSFET N-CH 40V 42A I-PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLU3114ZPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.9 mOhm @ 42A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 42A
• Vgs(th) (max) @ Id: 2.5V @ 100µA
• Gate Charge (qg) @ Vgs: 56nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 3810pF @ 25V
• Power - Max: 140W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 130A
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 3.9mohm
• Rds(on) Test Voltage Vgs: 10V
• Operating Temperature Range: -55°C To +175°C
• Rohs Compliant: Yes
• Threshold Voltage Vgs Typ: 2.5V
• Resistance Drain-source Rds (on): 6.5 mOhms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: 16 V
• Continuous Drain Current: 130 A
• Power Dissipation: 140 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 40 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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1000
1000
100
Fig 3. Typical Transfer Characteristics
100
0.1
Fig 1. Typical Output Characteristics
0.1
10
10
1
1
0.1
1
TOP
BOTTOM
T J = 175°C
V GS , Gate-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
2
2.5V
VGS
15V
10V
8.0V
4.5V
3.5V
3.0V
2.7V
2.5V
3
1
T J = 25°C
V DS = 15V
≤60µs PULSE WIDTH
4
≤ 60µs PULSE WIDTH
Tj = 25°C
5
10
6
100
7
1000
200
150
100
100
50
Fig 4. Typical Forward Transconductance
10
Fig 2. Typical Output Characteristics
1
0
0.1
0
TOP
BOTTOM
V DS , Drain-to-Source Voltage (V)
I D ,Drain-to-Source Current (A)
20
vs. Drain Current
VGS
15V
10V
8.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.5V
1
40
T J = 25°C
≤ 60µs PULSE WIDTH
Tj = 175°C
V DS = 10V
380µs PULSE WIDTH
T J = 175°C
60
10
80
3
100
100