IRLU3114ZPBF International Rectifier, IRLU3114ZPBF Datasheet - Page 7

• Manufacturer Part Number: IRLU3114ZPBF
• Description: MOSFET N-CH 40V 42A I-PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLU3114ZPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.9 mOhm @ 42A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 42A
• Vgs(th) (max) @ Id: 2.5V @ 100µA
• Gate Charge (qg) @ Vgs: 56nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 3810pF @ 25V
• Power - Max: 140W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 130A
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 3.9mohm
• Rds(on) Test Voltage Vgs: 10V
• Operating Temperature Range: -55°C To +175°C
• Rohs Compliant: Yes
• Threshold Voltage Vgs Typ: 2.5V
• Resistance Drain-source Rds (on): 6.5 mOhms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: 16 V
• Continuous Drain Current: 130 A
• Power Dissipation: 140 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 40 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

www.irf.com
1000
100
150
100
0.1
10
50
1.0E-06
1
0
Fig 16. Maximum Avalanche Energy
25
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Τ j = 25°C and
Tstart = 150°C.
Starting T J , Junction Temperature (°C)
0.05
0.10
50
Duty Cycle = Single Pulse
vs. Temperature
TOP
BOTTOM 1.0% Duty Cycle
I D = 42A
75
1.0E-05
0.01
100
Fig 15. Typical Avalanche Current vs.Pulsewidth
Single Pulse
125
150
1.0E-04
175
tav (sec)
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
2. Safe operation in Avalanche is allowed as long as
3. Equation below based on circuit and waveforms shown in
4. P
5. BV = Rated breakdown voltage (1.3 factor accounts for
6. I
7. ∆T
t
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of T
voltage increase during avalanche).
T
D = Duty cycle in avalanche = t
Z
Figures 12a, 12b.
neither Tjmax nor Iav (max) is exceeded.
avalanche pulse.
every part type.
av =
av
thJC
jmax
D (ave)
= Allowable avalanche current.
=
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆ Tj = 150°C and
Tstart =25°C (Single Pulse)
Average time in avalanche.
(D, t
Allowable rise in junction temperature, not to exceed
(assumed as 25°C in Figure 15, 16).
= Average power dissipation per single
1.0E-03
av
P
) = Transient thermal resistance, see figure 11)
D (ave)
= 1/2 ( 1.3·BV·I
I
E
av
AS (AR)
= 2DT/ [1.3·BV·Z
= P
D (ave)
jmax
1.0E-02
av
av
. This is validated for
·f
) = DT/ Z
·t
th
av
]
thJC
1.0E-01
7