IRLU3114ZPBF International Rectifier, IRLU3114ZPBF Datasheet - Page 4

• Manufacturer Part Number: IRLU3114ZPBF
• Description: MOSFET N-CH 40V 42A I-PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLU3114ZPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.9 mOhm @ 42A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 42A
• Vgs(th) (max) @ Id: 2.5V @ 100µA
• Gate Charge (qg) @ Vgs: 56nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 3810pF @ 25V
• Power - Max: 140W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 130A
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 3.9mohm
• Rds(on) Test Voltage Vgs: 10V
• Operating Temperature Range: -55°C To +175°C
• Rohs Compliant: Yes
• Threshold Voltage Vgs Typ: 2.5V
• Resistance Drain-source Rds (on): 6.5 mOhms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: 16 V
• Continuous Drain Current: 130 A
• Power Dissipation: 140 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 40 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

100000
10000
4
1000
1000
100
100
1.0
10
Fig 5. Typical Capacitance vs.
Fig 7. Typical Source-Drain Diode
0.0
1
T J = 175°C
Drain-to-Source Voltage
V DS , Drain-to-Source Voltage (V)
0.5
V SD , Source-to-Drain Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Forward Voltage
1.0
T J = 25°C
C iss
C rss
C oss
f = 1 MHZ
1.5
10
2.0
V GS = 0V
2.5
100
3.0
10000
1000
100
6.0
5.0
4.0
3.0
2.0
1.0
0.0
10
Fig 8. Maximum Safe Operating Area
1
1
0
Fig 6. Typical Gate Charge vs.
Tc = 25°C
Tj = 175°C
Single Pulse
I D = 42A
Gate-to-Source Voltage
V DS , Drain-to-Source Voltage (V)
V DS = 32V
V DS = 20V
V DS = 8.0V
10
Q G , Total Gate Charge (nC)
10msec
OPERATION IN THIS AREA
LIMITED BY R DS (on)
20
1msec
DC
10
100µsec
30
www.irf.com
40
100
50