IRLU3114ZPBF International Rectifier, IRLU3114ZPBF Datasheet - Page 5

• Manufacturer Part Number: IRLU3114ZPBF
• Description: MOSFET N-CH 40V 42A I-PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLU3114ZPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.9 mOhm @ 42A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 42A
• Vgs(th) (max) @ Id: 2.5V @ 100µA
• Gate Charge (qg) @ Vgs: 56nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 3810pF @ 25V
• Power - Max: 140W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 130A
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 3.9mohm
• Rds(on) Test Voltage Vgs: 10V
• Operating Temperature Range: -55°C To +175°C
• Rohs Compliant: Yes
• Threshold Voltage Vgs Typ: 2.5V
• Resistance Drain-source Rds (on): 6.5 mOhms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: 16 V
• Continuous Drain Current: 130 A
• Power Dissipation: 140 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 40 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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0.001
140
120
100
0.01
80
60
40
20
0.1
0
10
1E-006
Fig 9. Maximum Drain Current vs.
1
25
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
D = 0.50
50
0.01
Case Temperature
0.02
0.20
0.10
0.05
T C , Case Temperature (°C)
75
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
100
Limited By Package
125
150
t 1 , Rectangular Pulse Duration (sec)
0.0001
175
τ
J
τ
J
τ
1
Ci= τi/Ri
τ
1
Ci
i/Ri
R
2.0
1.5
1.0
0.5
1
R
1
Fig 10. Normalized On-Resistance
-60 -40 -20 0 20 40 60 80 100120140160180
τ
0.001
2
R
τ
I D = 42A
V GS = 10V
2
2
R
2
T J , Junction Temperature (°C)
R
vs. Temperature
τ
3
3
R
τ
3
3
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
τ
R
4
τ
4
R
4
4
τ
C
τ
0.01
Ri (°C/W) τi (sec)
0.0350
0.2433
0.4851
0.2867
0.000013
0.000077
0.001043
0.004658
5
0.1