IXTA90N075T2 IXYS, IXTA90N075T2 Datasheet - Page 5

• Manufacturer Part Number: IXTA90N075T2
• Description: MOSFET N-CH 75V 90A TO-263
• Manufacturer: IXYS
• Series: TrenchT2™r

Specifications of IXTA90N075T2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 10 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 90A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 54nC @ 10V
• Input Capacitance (ciss) @ Vds: 3290pF @ 25V
• Power - Max: 180W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.01 Ohms
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 90 A
• Power Dissipation: 180 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 75
• Id(cont), Tc=25°c, (a): 90
• Rds(on), Max, Tj=25°c, (?): 0.01
• Ciss, Typ, (pf): 3290
• Qg, Typ, (nc): 54
• Trr, Typ, (ns): 50
• Pd, (w): 180
• Rthjc, Max, (k/w): 0.82
• Package Style: TO-263
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2009 IXYS CORPORATION, All Rights Reserved
32
30
28
26
24
22
20
18
16
70
60
50
40
30
20
10
25
24
23
22
21
20
19
18
17
25
24
4
t
T
V
t
R
V
r
J
26
DS
f
DS
I
G
35
= 125ºC, V
D
= 5Ω, V
= 37V
= 37V
6
= 50A, 25A
R
V
28
DS
G
Switching Times vs. Gate Resistance
= 5Ω , V
Switching Times vs. Drain Current
= 37V
45
GS
Rise Time vs. Junction Temperature
t
30
T
d(on)
GS
t
J
8
d(off)
Fig. 17. Resistive Turn-off
= 10V
I
Fig. 15. Resistive Turn-on
= 125ºC
= 10V
GS
D
- - - -
32
55
= 50A
- - - -
Fig. 13. Resistive Turn-on
= 10V
T
10
34
J
- Degrees Centigrade
65
I
I
D
D
R
- Amperes
36
= 25A
G
- Ohms
12
75
38
40
14
85
I
42
D
T
= 50A, 25A
J
95
16
= 25ºC
44
105
46
18
48
115
20
50
34
30
26
22
18
14
10
55
50
45
40
35
30
25
20
15
125
65
60
55
50
45
40
35
30
25
20
15
30
28
26
24
22
20
18
23
22
21
20
19
18
24
25
4
t
T
V
26
f
R
V
J
DS
35
= 125ºC, V
G
DS
Switching Times vs. Junction Temperature
t
R
V
6
= 37V
= 5Ω , V
f
G
DS
= 37V
Switching Times vs. Gate Resistance
28
= 5Ω, V
= 37V
45
GS
t
30
8
GS
d(off)
Fig. 18. Resistive Turn-off
GS
= 10V
Fig. 16. Resistive Turn-off
t
= 10V
55
Rise Time vs. Drain Current
d(off)
= 10V
Fig. 14. Resistive Turn-on
- - - -
32
T
J
10
- - - -
- Degrees Centigrade
65
34
R
G
I
D
- Ohms
12
75
36
- Amperes
T
T
J
J
I
= 25ºC
= 125ºC
D
38
I
85
= 25A
D
14
= 50A
I
40
IXTA90N075T2
IXTP90N075T2
D
I
95
= 25A
D
= 50A
16
42
105
44
18
115
46
125
20
48
100
90
80
70
60
50
40
30
20
10
0
45
40
35
30
25
20
50