STP17NF25 STMicroelectronics, STP17NF25 Datasheet - Page 4

• Manufacturer Part Number: STP17NF25
• Description: MOSFET N-CH 250V 17A TO-220
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STP17NF25

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 165 mOhm @ 8.5A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 29.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 1000pF @ 25V
• Power - Max: 90W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.165 Ohm @ 10 V
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 17 A
• Power Dissipation: 90000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 8.5A
• Drain Source Voltage Vds: 250V
• On Resistance Rds(on): 140mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7511-5; STP17NF25

Electrical characteristics
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4/17
Electrical characteristics
(T
Table 4.
Table 5.
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
V
Symbol
Symbol
R
V
C
CASE
(BR)DSS
g
I
I
DS(on)
C
GS(th)
C
C
oss eq
Q
Q
DSS
GSS
R
fs
Q
oss
rss
iss
gs
gd
G
g
(1)
=25°C unless otherwise specified)
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Gate input resistance
On/off states
Dynamic
DS
= 0)
Parameter
Parameter
GS
= 0)
STI17NF25 - STD17NF25 - STF17NF25 - STP17NF25
I
V
V
V
V
V
V
V
V
V
V
(see Figure 16)
f=1MHz gate DC bias=0 test
signal level=20mV open
drain
D
GS
GS
GS
GS
DS
DS
DS
DS
DS
DD
= 1mA, V
= V
= 10V, I
=0, V
=200V, I
= Max rating,
= Max rating,Tc=125°C
= ±20V
= 15V, I
=25V, f=1 MHz, V
=10V
Test conditions
Test conditions
GS
DS
, I
D
GS
D
D
=0V to 200V
D
= 8.5A
= 250µA
= 8.5A
= 17A
= 0
GS
=0
Min.
Min.
250
2
1000
Typ.
Typ.
0.14
29.5
15.6
178
135
4.8
14
28
3
2
0.165
Max.
Max.
±
100
10
1
4
Unit
Unit
nC
nC
nC
pF
pF
pF
pF
µA
µA
nA
S
Ω
V
V
Ω