STP75NF75 STMicroelectronics, STP75NF75 Datasheet - Page 4
![MOSFET N-CH 75V 80A TO-220](/photos/1/39/13943/to-220_sml.jpg)
STP75NF75
Manufacturer Part Number
STP75NF75
Description
MOSFET N-CH 75V 80A TO-220
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet
1.STP75NF75.pdf
(16 pages)
Specifications of STP75NF75
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
11 mOhm @ 40A, 10V
Drain To Source Voltage (vdss)
75V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
160nC @ 10V
Input Capacitance (ciss) @ Vds
3700pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.011 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
20 S
Drain-source Breakdown Voltage
75 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
80 A
Power Dissipation
300000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-2788-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STP75NF75
Manufacturer:
ST
Quantity:
5 000
Company:
Part Number:
STP75NF75
Manufacturer:
ST
Quantity:
86 755
Part Number:
STP75NF75
Manufacturer:
ST
Quantity:
20 000
Electrical characteristics
2
4/16
Electrical characteristics
(T
Table 3.
Table 4.
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
V
Symbol
Symbol
R
CASE
V
(BR)DSS
g
C
I
I
DS(on)
C
C
GS(th)
Q
Q
DSS
GSS
fs
Q
oss
rss
iss
gs
gd
g
(1)
=25°C unless otherwise specified)
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
DS
= 0)
Parameter
Parameter
GS
= 0)
I
V
V
V
V
V
V
V
V
V
V
D
DS
DS
GS
DS
GS
GS
GS
DS
DS
DD
= 250µA, V
= V
= 10V, I
= Max rating,
= Max rating @125°C
= ±20V
= 15V, I
=25V, f = 1 MHz,
= 0
=10V
= 60V, I
Test conditions
Test conditions
GS
, I
STB75NF75 - STP75NF75 - STP75NF75FP
D
D
D
D
= 40A
GS
= 250µA
= 40A
= 80A
= 0
Min.
Min.
75
2
0.0095 0.011
3700
Typ.
Typ.
730
240
117
20
27
47
3
Max.
Max.
±100
160
10
1
4
Unit
Unit
nC
nC
nC
µA
µA
nA
pF
pF
pF
S
V
V
Ω