STP80NF55-06 STMicroelectronics, STP80NF55-06 Datasheet - Page 8
STP80NF55-06
Manufacturer Part Number
STP80NF55-06
Description
MOSFET N-CH 55V 80A TO-220
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet
1.STB80NF55-06T4.pdf
(17 pages)
Specifications of STP80NF55-06
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
6.5 mOhm @ 40A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
189nC @ 10V
Input Capacitance (ciss) @ Vds
4400pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0065 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
150 S
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
80 A
Power Dissipation
300000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-2774-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STP80NF55-06
Manufacturer:
ST
Quantity:
14 000
Part Number:
STP80NF55-06
Manufacturer:
ST
Quantity:
20 000
Company:
Part Number:
STP80NF55-06FP
Manufacturer:
ST
Quantity:
12 500
Part Number:
STP80NF55-06FP
Manufacturer:
ST
Quantity:
20 000
Electrical characteristics
STB80NF55-06 - STB80NF55-06-1 - STP80NF55-06 - STP80NF55-06FP
Figure 13. Source-drain diode forward
Figure 14. Normalized B
vs temperature
VDSS
characteristics
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