STP80NF06 STMicroelectronics, STP80NF06 Datasheet - Page 7
![MOSFET N-CH 60V 80A TO-220](/photos/1/39/13943/to-220_sml.jpg)
STP80NF06
Manufacturer Part Number
STP80NF06
Description
MOSFET N-CH 60V 80A TO-220
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet
1.STP80NF06.pdf
(14 pages)
Specifications of STP80NF06
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
8 mOhm @ 40A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
150nC @ 10V
Input Capacitance (ciss) @ Vds
3850pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.008 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
20 S
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
80 A
Power Dissipation
300000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
497-3201-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STP80NF06
Manufacturer:
ST
Quantity:
10 000
Company:
Part Number:
STP80NF06
Manufacturer:
IXYS
Quantity:
7 000
STP80NF06 - STB80NF06 - STW80NF06
Figure 7.
Figure 9.
Figure 11. Source-drain diode forward
Gate charge vs. gate-source voltage Figure 8.
Normalized gate threshold voltage
vs. temperature
characteristics
Figure 10. Normalized on resistance vs.
Figure 12. Normalized breakdown voltage vs.
Capacitance variations
temperature
tj
Electrical characteristics
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