STW16NK60Z STMicroelectronics, STW16NK60Z Datasheet

MOSFET N-CH 600V 14A TO-247

STW16NK60Z

Manufacturer Part Number
STW16NK60Z
Description
MOSFET N-CH 600V 14A TO-247
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet

Specifications of STW16NK60Z

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
420 mOhm @ 7A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
14A
Vgs(th) (max) @ Id
4.5V @ 50µA
Gate Charge (qg) @ Vgs
86nC @ 10V
Input Capacitance (ciss) @ Vds
2650pF @ 25V
Power - Max
190W
Mounting Type
Through Hole
Package / Case
TO-247-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.42 Ohms
Forward Transconductance Gfs (max / Min)
12 S
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
14 A
Power Dissipation
190 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
7A
Drain Source Voltage Vds
600V
On Resistance Rds(on)
380mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3.75V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-3558-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STW16NK60Z
Manufacturer:
ST
Quantity:
7 950
Part Number:
STW16NK60Z
Manufacturer:
ST
Quantity:
12 500
Part Number:
STW16NK60Z
Manufacturer:
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Part Number:
STW16NK60Z,W16NK60Z
Manufacturer:
ST
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Features
1. Limited by package.
Application
Description
The new SuperMESH™ series of Power
MOSFETS is the result of further design
improvements on ST's well-established strip-
based PowerMESH™ layout. In addition to
significantly lower on-resistance, the device offers
superior dv/dt capability to ensure optimal
performance even in the most demanding
applications. The SuperMESH™ devices further
complement an already broad range of innovative
high voltage MOSFETs, which includes the
revolutionary MDmesh™ products.
Table 1.
December 2009
STW16NK60Z
STF16NK60Z
STP16NK60Z
100% avalanche tested
Extremely high dv/dt capability
Gate charge minimized
Very low intrinsic capacitances
Very good manufacturing repeatability
Switching applications
Type
STW16NK60Z
STP16NK60Z
STF16NK60Z
Order codes
Device summary
N-channel 600 V, 038 Ω , 14 A, TO-220, TO-220FP, TO-247
600 V
600 V
600 V
V
DSS
< 0.42 Ω 14 A
< 0.42 Ω
< 0.42 Ω
R
max
DS(on)
Zener-protected SuperMESH™ Power MOSFET
W16NK60Z
P16NK60Z
F16NK60Z
Marking
14 A
14 A
I
D
(1)
Doc ID 10249 Rev 5
190 W
190 W
40 W
Pw
STP16NK60Z, STW16NK60Z
Figure 1.
TO-220FP
TO-220FP
Package
TO-220
TO-247
G(1)
Internal schematic diagram
1
2
3
STF16NK60Z
D(2)
S(3)
TO-247
Packaging
1
Tube
TO-220
2
3
www.st.com
AM01476v1
1
2
3
1/15
15

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STW16NK60Z Summary of contents

Page 1

... The SuperMESH™ devices further complement an already broad range of innovative high voltage MOSFETs, which includes the revolutionary MDmesh™ products. Table 1. Device summary Order codes STF16NK60Z STP16NK60Z STW16NK60Z December 2009 STP16NK60Z, STW16NK60Z ( 190 W TO-220FP 14 A 190 W Figure 1. ...

Page 2

... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2/15 STF16NK60Z, STP16NK60Z, STW16NK60Z . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Doc ID 10249 Rev ...

Page 3

... STF16NK60Z, STP16NK60Z, STW16NK60Z 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Gate- source voltage GS I Drain current (continuous Drain current (continuous (2) I Drain current (pulsed Total dissipation at T TOT Derating factor Gate source ESD(HBM-C = 100 pF, V ESD(G- 1.5 kΩ) (3) dv/dt ...

Page 4

... C oss eq increases from 0 to 80% V Table 7. Switching times Symbol Parameter t Turn-on delay time d(on) t Rise time r t Turn-off-delay time d(off) t Fall time f 4/15 STF16NK60Z, STP16NK60Z, STW16NK60Z Parameter Test conditions mA Max rating Max rating ± ...

Page 5

... STF16NK60Z, STP16NK60Z, STW16NK60Z Table 8. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM 1 ...

Page 6

... Safe operating area for TO-220FP Figure 6. Safe operating area for TO-247 6/15 STF16NK60Z, STP16NK60Z, STW16NK60Z Figure 3. Figure 5. AM01498v1 10µs 100µs 1ms 10ms Figure 7. Doc ID 10249 Rev 5 Thermal impedance for TO-220 Thermal impedance for TO-220FP Thermal impedance for TO-247 ...

Page 7

... STF16NK60Z, STP16NK60Z, STW16NK60Z Figure 8. Output characteristics Figure 10. Normalized BV DSS Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations Figure 9. vs temperature Figure 11. Static drain-source on resistance Doc ID 10249 Rev 5 Electrical characteristics Transfer characteristics 7/15 ...

Page 8

... Electrical characteristics Figure 14. Normalized gate threshold voltage vs temperature Figure 16. Source-drain diode forward characteristics 8/15 STF16NK60Z, STP16NK60Z, STW16NK60Z Figure 15. Normalized on resistance vs temperature Figure 17. Maximum avalanche energy vs temperature Doc ID 10249 Rev 5 ...

Page 9

... STF16NK60Z, STP16NK60Z, STW16NK60Z 3 Test circuits Figure 18. Switching times test circuit for resistive load D.U. Figure 20. Test circuit for inductive load switching and diode recovery times FAST L=100µH G D.U.T. DIODE Ω Figure 22. Unclamped inductive waveform Figure 19. Gate charge test circuit 3.3 2200 µ ...

Page 10

... Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK trademark. 10/15 STF16NK60Z, STP16NK60Z, STW16NK60Z Doc ID 10249 Rev 5 ® ...

Page 11

... STF16NK60Z, STP16NK60Z, STW16NK60Z Table 10. TO-220FP mechanical data Dim Dia Figure 24. TO-220FP drawing Min. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 28.6 9.8 2.9 15 Dia Doc ID 10249 Rev 5 Package mechanical data mm Typ. Max. 4.6 2.7 2.75 0.7 1 1.70 1.70 5.2 2 ...

Page 12

... Package mechanical data 12/15 STF16NK60Z, STP16NK60Z, STW16NK60Z TO-220 type A mechanical data Dim Min A 4.40 b 0.61 b1 1.14 c 0.48 D 15. 2.40 e1 4.95 F 1.23 H1 6. 3.50 L20 L30 ∅P 3.75 Q 2.65 Doc ID 10249 Rev 5 mm Typ Max 4.60 0.88 1.70 0.70 15.75 1.27 10 ...

Page 13

... STF16NK60Z, STP16NK60Z, STW16NK60Z Dim øP øR S TO-247 Mechanical data mm. Min. Typ 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 Doc ID 10249 Rev 5 Package mechanical data Max. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 14 ...

Page 14

... Revision history 5 Revision history Table 11. Document revision history Date 11-Sep-2006 07-Jun-2007 04-Dec-2009 14/15 STF16NK60Z, STP16NK60Z, STW16NK60Z Revision 3 4 Added statement for ECOPACK 5 Updated packages mechanical data. Doc ID 10249 Rev 5 Changes ® . ...

Page 15

... STF16NK60Z, STP16NK60Z, STW16NK60Z Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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