STW14NK50Z STMicroelectronics, STW14NK50Z Datasheet - Page 4
STW14NK50Z
Manufacturer Part Number
STW14NK50Z
Description
MOSFET N-CH 500V 14A TO-247
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet
1.STP14NK50Z.pdf
(19 pages)
Specifications of STW14NK50Z
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
380 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
14A
Vgs(th) (max) @ Id
4.5V @ 100µA
Gate Charge (qg) @ Vgs
92nC @ 10V
Input Capacitance (ciss) @ Vds
2000pF @ 25V
Power - Max
150W
Mounting Type
Through Hole
Package / Case
TO-247-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.38 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
12 S
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
14 A
Power Dissipation
150000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-3258-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STW14NK50Z
Manufacturer:
HARRIS
Quantity:
10 000
Part Number:
STW14NK50Z
Manufacturer:
ST
Quantity:
20 000
Electrical ratings STP14NK50Z - STP14NK50ZFP - STB14NK50Z - STB14NK50Z-1 - STW14NK50Z
1.1
4/19
Table 3.
Table 4.
Protection features og gate-to-source zener diodes
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Symbol
BV
Symbol
GSO
E
I
AR
AS
Gate-source breakdown voltage
Avalanche characteristics
Gate-source zener diode
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
Single pulse avalanche energy
(starting Tj=25°C, Id=Iar, Vdd=50V)
Parameter
Parameter
Igs=±1mA
(Open Drain)
Test conditions
Min.
30
Value
400
Typ.
12
Max.
Unit
Unit
mJ
A
V