IXTA44P15T IXYS, IXTA44P15T Datasheet - Page 5

• Manufacturer Part Number: IXTA44P15T
• Description: MOSFET P-CH 150V 44A TO-263
• Manufacturer: IXYS
• Series: TrenchP™r

Specifications of IXTA44P15T

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 65 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 44A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 175nC @ 10V
• Input Capacitance (ciss) @ Vds: 13400pF @ 25V
• Power - Max: 298W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Vdss, Max, (v): -150
• Id(cont), Tc=25°c, (a): -44
• Rds(on), Max, Tj=25°c, (?): 0.065
• Ciss, Typ, (pf): 13400
• Qg, Typ, (nc): 175
• Trr, Typ, (ns): 140
• Trr, Max, (ns): -
• Pd, (w): 298
• Rthjc, Max, (k/w): 0.42
• Package Style: TO-263
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2010 IXYS CORPORATION, All Rights Reserved
100,000
10,000
1,000
-140
-120
-100
100
-50
-40
-30
-20
-10
-80
-60
-40
-20
0
0
-3.0
-0.4
0
f
Fig. 9. Forward Voltage Drop of Intrinsic Diode
= 1 MHz
-0.5
-5
-3.5
-0.6
-10
Fig. 7. Input Admittance
-4.0
T
Fig. 11. Capacitance
J
-0.7
-15
= 125ºC
V
DS
V
V
GS
SD
- Volts
C iss
C oss
-0.8
C rss
-4.5
T
-20
- Volts
- Volts
J
= 125ºC
- 40ºC
25ºC
-0.9
-25
-5.0
T
J
= 25ºC
-1.0
-30
-5.5
-1.1
-35
-6.0
-1.2
-40
-
1000
-
100
-
0.1
-
10
-
-10
1
70
60
50
40
30
20
10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
-
0
1
0
0
R
T
T
Single Pulse
V
I
I
J
C
D
G
DS(on)
DS
= 150ºC
-5
= 25ºC
= - 22A
= -1mA
20
= - 75V
Fig. 12. Forward-Bias Safe Operating Area
Limit
-10
40
IXTA44P15T IXTP44P15T
IXTQ44P15T IXTH44P15T
Fig. 8. Transconductance
-15
-
10
60
Fig. 10. Gate Charge
Q
I
-20
V
D
G
DS
- Amperes
- NanoCoulombs
80
- Volts
-25
100
T
-30
J
= - 40ºC
-
120
100
-35
25µs
100µs
1ms
10ms
100ms
DC
140
25ºC
-40
160
-45
125ºC
-
180
1000
-50