IXTP6N50D2 IXYS, IXTP6N50D2 Datasheet

MOSFET N-CH 500V 6A TO220AB

IXTP6N50D2

Manufacturer Part Number
IXTP6N50D2
Description
MOSFET N-CH 500V 6A TO220AB
Manufacturer
IXYS
Datasheet

Specifications of IXTP6N50D2

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Depletion Mode
Rds On (max) @ Id, Vgs
500 mOhm @ 3A, 0V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
6A
Gate Charge (qg) @ Vgs
96nC @ 5V
Input Capacitance (ciss) @ Vds
2800pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-220AB
Vds, Max, (v)
500
Id(on), Min, (a)
6
Rds(on), Max, (?)
0.5
Vgs(off), Max, (v)
-4
Ciss, Typ, (pf)
2800
Crss, Typ, (pf)
64
Qg, Typ, (nc)
96
Pd, (w)
300
Rthjc, Max, (ºc/w)
0.41
Package Style
TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Vgs(th) (max) @ Id
-
Depletion Mode
MOSFET
N-Channel
Symbol
V
V
V
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
I
© 2009 IXYS CORPORATION, All Rights Reserved
GSX
DSX(off)
D(on)
J
JM
stg
L
SOLD
DSX
GSX
GSM
D
GS(off)
DS(on)
d
J
DSX
= 25°C, Unless Otherwise Specified)
TO-220
TO-247
Test Conditions
T
Continuous
Transient
T
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-220 & TO-247)
V
V
V
V
V
V
TO-263
Test Conditions
J
C
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C
= - 5V, I
= 25V, I
= ±20V, V
= V
= 0V, I
= 0V, V
DSX
D
, V
DS
D
D
= 3A, Note 1
= 250μA
= 250μA
GS
= 25V, Note 1
DS
= - 5V
= 0V
Preliminary Technical Information
T
J
= 125°C
IXTA6N50D2
IXTH6N50D2
IXTP6N50D2
- 2.0
- 55 ... +150
- 55 ... +150
Characteristic Values
Min.
500
6
Maximum Ratings
1.13 / 10
500
±20
±30
300
150
300
260
2.5
3.0
6.0
Typ.
±100 nA
- 4.0
Nm/lb.in.
500 mΩ
Max.
50 μA
5 μA
°C
°C
°C
°C
°C
W
V
V
V
V
V
A
g
g
g
V
I
R
TO-263 AA (IXTA)
TO-220AB (IXTP)
TO-247 (IXTH)
G = Gate
S = Source
Features
• Normally ON Mode
• International Standard Packages
• Molding Epoxies Meet UL 94 V-0
Advantages
• Easy to Mount
• Space Savings
• High Power Density
Applications
• Audio Amplifiers
• Start-up Circuits
• Protection Circuits
• Ramp Generators
• Current Regulators
• Active Loads
D(on)
Flammability Classification
DS(on)
DSX
G
G
D
D S
≤ ≤ ≤ ≤ ≤
=
>
S
G
D
Tab = Drain
S
500mΩ Ω Ω Ω Ω
500V
6A
= Drain
D (Tab)
D (Tab)
D (Tab)
DS100177A(12/09)

Related parts for IXTP6N50D2

IXTP6N50D2 Summary of contents

Page 1

... DSX(off) DS DSX 0V 3A, Note 1 DS(on 0V 25V, Note 1 D(on © 2009 IXYS CORPORATION, All Rights Reserved Preliminary Technical Information IXTA6N50D2 IXTP6N50D2 IXTH6N50D2 Maximum Ratings 500 ±20 ±30 300 - 55 ... +150 150 - 55 ... +150 300 260 1. 2.5 3.0 6.0 Characteristic Values Min. Typ. 500 - 2 125° ...

Page 2

... L2 1.02 1.40 .040 .055 L3 1.27 1.78 .050 .070 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTA6N50D2 IXTP6N50D2 IXTH6N50D2 TO-220 (IXTP) Outline Max Pins Gate 3 - Source nC nC 0.41 °C/W °C/W °C/W Max. W TO-247 (IXTH) AD Outline Max. ...

Page 3

... 1E-01 0V 1E-02 1E-03 -1V 1E-04 -2V 1E-05 1E- 100ºC J 1.E+ -2.50V GS 1.E+08 -2.75V -3.00V 1.E+07 -3.25V 1.E+06 -3.50V 1.E+05 -3.75V 1.E+04 -4.00V 1.E+03 400 500 600 IXTA6N50D2 IXTP6N50D2 Fig. 2. Extended Output Characteristics @ -1V - Volts DS Fig. 4. Drain Current @ T 0 100 200 300 V - Volts DS Fig. 6. Dynamic Output Resistance vs. Gate Voltage T = 25º ...

Page 4

... IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. vs. Junction Temperature 75 100 125 150 -0.5 0.0 0.5 1.0 1 25V GS(off DSX GS 75 100 125 150 IXTA6N50D2 IXTP6N50D2 Fig Normalized to I DS(on) vs. Drain Current 4.0 3.5 3.0 2 125ºC J 2.0 1 25ºC J 1.0 0.5 0 ...

Page 5

... C oss rss - 100.0 R 100µs 10.0 1ms 10ms 1.0 100ms DC 0.1 1,000 10 Fig. 17. Maximum Transient Thermal Impedance 0.001 0.01 Pulse Width - Seconds IXTA6N50D2 IXTP6N50D2 IXTH6N50D2 Fig. 14. Gate Charge V = 250V 10mA NanoCoulombs G Fig. 16. Forward-Bias Safe Operating Area @ T = 75ºC C Limit DS(on 150ºC ...

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