IXTQ200N10T IXYS, IXTQ200N10T Datasheet - Page 4

• Manufacturer Part Number: IXTQ200N10T
• Description: MOSFET N-CH 100V 200A TO-3P
• Manufacturer: IXYS
• Series: TrenchMV™r

Specifications of IXTQ200N10T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.5 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 200A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 152nC @ 10V
• Input Capacitance (ciss) @ Vds: 9400pF @ 25V
• Power - Max: 550W
• Mounting Type: Through Hole
• Package / Case: TO-3P
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0055 Ohms
• Drain-source Breakdown Voltage: 100 V
• Continuous Drain Current: 200 A
• Power Dissipation: 550 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 100
• Id(cont), Tc=25°c, (a): 200
• Rds(on), Max, Tj=25°c, (?): 0.0055
• Ciss, Typ, (pf): 9400
• Qg, Typ, (nc): 152
• Trr, Typ, (ns): 76
• Trr, Max, (ns): -
• Pd, (w): 550
• Rthjc, Max, (k/w): 0.27
• Package Style: TO-3P
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
100,000
10,000
1,000
250
225
200
175
150
125
100
300
270
240
210
180
150
120
75
50
25
90
60
30
100
0
0
3.5
0.4
0
f
4.0
0.5
= 1MHz
5
Fig. 9. Forward Voltage Drop of
4.5
0.6
10
Fig. 7. Input Admittance
T
Fig. 11. Capacitance
J
= 150ºC
Intrinsic Diode
T
0.7
5.0
J
15
V
V
= 150ºC
V
GS
SD
- 40ºC
DS
25ºC
- Volts
- Volts
- Volts
0.8
5.5
20
0.9
6.0
25
T
C iss
C oss
C rss
J
= 25ºC
1.0
6.5
30
1.1
7.0
35
1.2
7.5
40
1.00
0.10
0.01
160
140
120
100
80
60
40
20
10
0.0001
0
9
8
7
6
5
4
3
2
1
0
0
0
V
I
I
D
G
DS
25
= 25A
= 10mA
20
Fig. 12. Maximum Transient Thermal
= 50V
0.001
50
Fig. 8. Transconductance
40
75
Q
Fig. 10. Gate Charge
Pulse Width - Seconds
G
- NanoCoulombs
60
I
0.01
D
100
Impedance
- Amperes
125
80
150
0.1
100
T
IXYS REF: T_200N10T(6V)9-30-08-D
IXTQ200N10T
IXTH200N10T
J
= - 40ºC
175
150ºC
25ºC
120
200
1
140
225
160
250
10