IXTQ36P15P IXYS, IXTQ36P15P Datasheet - Page 6
![MOSFET P-CH 150V 36A TO-3P](/photos/5/55/55517/ixtq36p15p_sml.jpg)
IXTQ36P15P
Manufacturer Part Number
IXTQ36P15P
Description
MOSFET P-CH 150V 36A TO-3P
Manufacturer
IXYS
Series
PolarP™r
Datasheet
1.IXTP36P15P.pdf
(6 pages)
Specifications of IXTQ36P15P
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
110 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
36A
Vgs(th) (max) @ Id
4.5V @ 250µA
Gate Charge (qg) @ Vgs
55nC @ 10V
Input Capacitance (ciss) @ Vds
3100pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-3P
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.11 Ohms
Drain-source Breakdown Voltage
- 150 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
36 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
-150
Id(cont), Tc=25°c, (a)
-36
Rds(on), Max, Tj=25°c, (?)
0.11
Ciss, Typ, (pf)
3100
Qg, Typ, (nc)
55
Trr, Typ, (ns)
228
Pd, (w)
300
Rthjc, Max, (k/w)
0.42
Package Style
TO-3P
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
1.00
0.10
0.01
0.0001
0.001
Fig. 13. Maximum Transient Thermal Impedance
0.01
Pulse Width - Seconds
0.1
IXTA36P15P
IXTH36P15P
1
IXTP36P15P
IXTQ36P15P
IXYS REF: T_36P15P(B5)3-26-08-B
10